Abstract:Reactive ion etching (RIE) using fluorinated gases, such as admixtures of CF4 with O2, has been conducted on sputter deposited films of SiC. For comparison purposes, the same experiments with SiO2 films and Si wafers have been conducted. The influence of rf power, pressure, and O2 concentration on etch rate in CF4+O2, SF6+He, and Ar gases has been investigated. RIE mechanisms were studied using in situ monitoring of excited fluorine emission intensity and dc self-bias at the lower electrode. Typical etch rates of Si, SiO2, and SiC are 1220, 600, and 375 Å/min in CF4+4% O2; 8850, 500, and 560 Å/min in SF6+50% He; and 340, 280, and 270 Å/min in Ar, respectively, at P=200 W, p=20 mTorr, and 300 K. Under these conditions the dc self-bias levels are −396 V for CF4+4% O2, −350 V for SF6+50% He, and −414 V for Ar. In both CF4+4% O2 and SF6+50% He, the etch rates of Si, SiO2, and SiC all increase monotonically with the rf power. However, with increasing pressure the Si etch rate increases while the etch rates of SiO2 and SiC decrease. Since the dc self-bias varies proportionally with power and inversely with pressure, it is clear that the etching of Si is chemical reaction rate controlled. On the other hand, the etch rate of SiC depends on the ion bombardment energy and is thus dominantly controlled by a physical reaction. The SiC etch rate exhibits a weak dependence on O2 concentration in CF4+O2 mixtures. The dc self-bias is not affected by increasing O2 concentration, but the SiC etch rate is slightly enhanced. This suggests that a certain etching inhibitor layer exists on the surface of SiC, which can weakly react with the O2 plasma. Auger electron spectroscopy data indicates that this layer consists of carbon atoms.

Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry

Isotropic Etch for SiO2 Microcantilever Release with ICP System

In-Flight Dry Etching of Plasma-Synthesized Silicon Nanocrystals

Micro-trench free 4H-SiC etching with improved SiC/SiO2 selectivity using inductively coupled SF6/O2/Ar plasma

Microscale pattern etch of 4H–SiC by inductively coupled plasma

High-etch rate processes for performing deep, highly anisotropic etches in silicon carbide using inductively coupled plasma etching

Sub-damage-threshold plasma etching and profile tailoring of Si through laser-stimulated thermal desorption

Selective Dry Etching of GaAs/AlAs Based on SiCl4/SF6 Mixtures by ICP

Producing Silicon Carbide Micro and Nanostructures by Plasma‐Free Metal‐Assisted Chemical Etching

Study of high aspect ratio etching in silicon by a mixture of SF6/O2 using a 2-D model based on a Monte Carlo approach.

Modeling of fluorine-based high-density plasma etching of anisotropic silicon trenches with oxygen sidewall passivation

Investigation of SiO2 Etch Characteristics by C6F6/Ar/O2 Plasmas Generated Using Inductively Coupled Plasma and Capacitively Coupled Plasma

Ion Bombardment As Dominant Factor in Plasma Cryo-Etching for High Aspect Ratio Silicon Structures

Plasma Cyro-etching of High Aspect Ratio Silicon Crystal Structures

Simulation of SiO<sub>2</sub> etching in an inductively coupled CF<sub>4</sub> plasma

Reactive ion etching of SiC thin films using fluorinated gases

Reactive ion etching of plasma enhanced chemical vapor deposition amorphous silicon and silicon nitride: Feeding gas effects

Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications

REACTION SIMULATION AND EXPERIMENT OF A Cl2/Ar INDUCTIVELY COUPLED PLASMA FOR ETCHING OF SILICON

Low-temperature plasma etching of high aspect-ratio densely packed 15 to sub-10 nm silicon features derived from PS-PDMS block copolymer patterns

Electrochemical etching strategy for shaping monolithic 3D structures from 4H-SiC wafers