Abstract:Deep reactive ion etching (DRIE) process is a key growth for fabrication of micro-electromechanical system (MEMS) devices. Due to complexity of this process, including interaction of the process steps, full analytical modeling is complex. Plasma process holds deficiency of understanding because it is very easy to measure the results empirically. However, as device parameters shrink, this issue is more critical. In this paper, our process was modeled qualitatively based on High Density Plasma Etch Model. Deep trench solutions of etch rate based on continuity equation were successfully generated first time through mathematical analysis. It was also proved that the product of fluorine and gas phase concentration in SF6 remains identical during both deposition and etching stages. The etching process was treated as a combination of isotropic, directional and angle-dependent component parts. It exploited a synergistic balance of chemical as well as physical etching for promoting silicon trenches and high aspect ratio structures. Simulations were performed for comprehensive analysis of fluxes coming towards the surface during chemical reaction of gas. It is observed that near the surface, the distribution of the arrival flux follows a cosine distribution. Our model is feasible to analyze various parameters like gas delivery, reactor volume and temperature that help to assert large scale effects and to optimize equipment design.

Study of high aspect ratio etching in silicon by a mixture of SF6/O2 using a 2-D model based on a Monte Carlo approach.

Modeling of fluorine-based high-density plasma etching of anisotropic silicon trenches with oxygen sidewall passivation

Profile simulation model for sub-50 nm cryogenic etching of silicon using SF6/O2 inductively coupled plasma

Monte Carlo Simulation of Defects of a Trench Profile in the Process of Deep Reactive Ion Etching of Silicon

Monte Carlo simulation and measurement of silicon reactive ion etching profiles

Isotropic Etch for SiO2 Microcantilever Release with ICP System

Numerical study of aperture shape effects in deep cryogenic etching of silicon

Flux based modeling and simulation of dry etching for fabrication of silicon deep trench structures

Etching of high aspect ratio features in Si using SF6∕O2∕HBr and SF6∕O2∕Cl2 plasma

Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry

Ion Bombardment As Dominant Factor in Plasma Cryo-Etching for High Aspect Ratio Silicon Structures

Multiscale Simulations of Plasma Etching in Silicon Carbide Structures

SF6 plasma etching and profile evolution of silicon in microplasma reactor

Dry Etching of Silicon Materials in SF 6 Based Plasmas: Roles of and Gas Additives

High Aspect Ratio Si Etching Technique and Application

Parametric modeling and measurement of silicon etching in a high density chlorine plasma

Critical tasks in high aspect ratio silicon dry etching for microelectromechanical systems

Effects of deep reactive ion etching parameters on etching rate and surface morphology in extremely deep silicon etch process with high aspect ratio

Study on Mechanism of Al-enhanced Etching of Silicon by Reactive Ions in SF_6/O_2 Environment

Simulation of SiO<sub>2</sub> etching in an inductively coupled CF<sub>4</sub> plasma

Simulation of profile evolution in etching-polymerization alternation in drie of silicon with SF6/C4F8