Abstract:A laser-assisted plasma etch process is presented as an alternative to reactive ion etching for Si wafer processing in upcoming integrated circuit technology nodes. Poly-Si films were etched using an upstream 13.56 MHz inductively coupled plasma source while simultaneously being exposed to a pulsed Nd:YAG laser using the 532 nm line, with 100 Hz and 7 ns Gaussian pulse duration. For a fluorocarbon etch recipe of 50:8 sccm Ar:C4F8 with varied O2 flow, a minimum laser intensity for etch onset was necessary to overcome CFx polymer deposition in the absence of substrate bias. This etch onset occurred at 20 ± 3 mJ/cm2/pulse for 0 sccm O2 flow, dropping to 8 ± 2 mJ/cm2/pulse for 1.5 sccm O2. Beyond this onset, the etch rate increased linearly with laser intensity. Secondary ion mass spectroscopy depth profiling data showed that the no-bias 532 nm laser-assisted etch process preserved the distinction between the Si surface and the CFx polymer, with minimal uptake of etch gas residuals (C/F/O) in the Si. On the other hand, RIE showed significant straggle of the Si layer, spreading 3.5 nm through the CFx polymer layer at 1.0 W/cm2 radio-frequency bias and −140 V direct self-bias. comsol modeling of 532 nm incident on 22 nm half-pitch trench features showed strong polarization dependence, with deep-trench heating possible with polarization perpendicular to the trench line. This effect was confirmed in brief laser-assisted SF6 etching of pre-existing 50 nm half-pitch linear trenches.

Monte Carlo simulation and measurement of silicon reactive ion etching profiles

Study of high aspect ratio etching in silicon by a mixture of SF6/O2 using a 2-D model based on a Monte Carlo approach.

Isotropic Etch for SiO2 Microcantilever Release with ICP System

Profile simulation model for sub-50 nm cryogenic etching of silicon using SF6/O2 inductively coupled plasma

Modeling of fluorine-based high-density plasma etching of anisotropic silicon trenches with oxygen sidewall passivation

Monte Carlo Simulation of Defects of a Trench Profile in the Process of Deep Reactive Ion Etching of Silicon

Parametric modeling and measurement of silicon etching in a high density chlorine plasma

Simulation of SiO<sub>2</sub> etching in an inductively coupled CF<sub>4</sub> plasma

Simulation of SiO2 etching in an inductively coupled CF4 plasma

Flux based modeling and simulation of dry etching for fabrication of silicon deep trench structures

Sub-damage-threshold plasma etching and profile tailoring of Si through laser-stimulated thermal desorption

In-Flight Dry Etching of Plasma-Synthesized Silicon Nanocrystals

Molecular dynamics simulation of Si trench etching with SiO2 hard masks

REACTION SIMULATION AND EXPERIMENT OF A Cl2/Ar INDUCTIVELY COUPLED PLASMA FOR ETCHING OF SILICON

A Monte Carlo microtopography model for investigating plasma/reactive ion etch profile evolution

A two-dimensional computer simulation for dry etching using Monte Carlo techniques

High-etch rate processes for performing deep, highly anisotropic etches in silicon carbide using inductively coupled plasma etching

Reactive ion etching of plasma enhanced chemical vapor deposition amorphous silicon and silicon nitride: Feeding gas effects

Numerical study of aperture shape effects in deep cryogenic etching of silicon

Monte Carlo low pressure deposition profile simulations

Multiscale Simulations of Plasma Etching in Silicon Carbide Structures