Abstract:Silicon carbide (SiC) emerges as a promising ceramic material for high-temperature structural applications, especially within the aerospace sector. The utilization of SiC-based ceramic matrix composites (CMCs) instead of superalloys in components like engine shrouds, combustors, and nozzles offers notable advantages, including a 25% improvement in fuel efficiency, over 10% enhanced thrust, and the capability to withstand up to 500$^{\circ}$C higher operating temperatures. Employing a CALPHAD-reinforced multi-phase-field model, our study delves into the evolution of the SiC layer under isothermal solidification conditions. By modeling the growth of SiC between liquid Si and solid C at 1450$^{\circ}$C, we compared results with experimental microstructures and quantitatively examined the evolution of SiC thickness over time. Efficient sampling across the entire model space mitigated uncertainty in high-temperature kinetic parameters, allowing us to predict a range of growth rates and morphologies for the SiC layer. The model accounts for parameter uncertainty stemming from limited experimental knowledge and successfully predicts relevant morphologies for the system. Experimental results validated the kinetic parameters of the simulations, offering valuable insights and potential constraints on the reaction kinetics. We further explored the significance of multi-phase-field model parameters on two key outputs, and found that the diffusion coefficient of liquid Si emerges as the most crucial parameter significantly impacting the SiC average layer thickness and grain count over time. This study provides valuable insights into the microstructure evolution of the Si-C binary system, offering pertinent information for the engineering of CMCs in industrial applications.

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Feature Scale Simulation of PECVD of SiO2 in SiH4/N2O Mixture

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Simulation of SiO<sub>2</sub> etching in an inductively coupled CF<sub>4</sub> plasma

Multi-Scale Simulation of Nucleation and Growth of Nanoscale SiC on Si

Flux based modeling and simulation of dry etching for fabrication of silicon deep trench structures

Simulation of SiO2 etching in an inductively coupled CF4 plasma

Investigation and Modeling of Etching Through Silicon Carbide Vias (TSiCV) for SiC Interposer and Deep SiC Etching for Harsh Environment MEMS by DoE

Electrochemical etching strategy for shaping monolithic 3D structures from 4H-SiC wafers

Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers

Numerical study of aperture shape effects in deep cryogenic etching of silicon

Multi-physics modeling of the long-term evolution of helium plasma exposed surfaces

Monte Carlo simulation and measurement of silicon reactive ion etching profiles

Profile simulation model for sub-50 nm cryogenic etching of silicon using SF6/O2 inductively coupled plasma

Recent advances in plasma etching for micro and nano fabrication of silicon-based materials: a review

Three-Dimensional Simulation of DRIE Process Based on the Narrow Band Level Set and Monte Carlo Method

Multi-model Simulation of 300 Mm Silicon-Nitride Thin-Film Deposition by PECVD and Experimental Verification

Phase-Field Model of Silicon Carbide Growth During Isothermal Condition

REACTION SIMULATION AND EXPERIMENT OF A Cl2/Ar INDUCTIVELY COUPLED PLASMA FOR ETCHING OF SILICON