Abstract:Cryogenic deep reactive ion etching (Cryo DRIE) of silicon has become an enticing but challenging process utilized in front-end fabrication for the semiconductor industry. This method, compared to the Bosch process, yields vertical etch profiles with smoother sidewalls not subjected to scalloping, which are desired for many microelectromechanical systems (MEMS) applications. Smoother sidewalls enhance electrical contact by ensuring more conformal and uniform sidewall coverage, thereby increasing the effective contact area without altering contact dimensions. The versatility of the Cryo DRIE process allows for customization of the etch profiles by adjusting key process parameters such as table temperature, O2 percentage of the total gas flow rate (O2 + SF6), RF bias power, and process pressure. In this work, we undertake a comprehensive study of the effects of Cryo DRIE process parameters on the trench profiles in the structures used to define cantilevers in MEMS devices. Experiments were performed with an Oxford PlasmaPro 100 Estrelas ICP-RIE system using positive photoresist SPR-955 as a mask material. Our findings demonstrate significant influences on the sidewall angle, etch rate, and trench shape due to these parameter modifications. Varying the table temperature between -80°C and -120°C under a constant process pressure of 10 mTorr changes the etch rate from 3 to 4 μm/min, while sidewall angle changes by ~2°, from positive ( 90° relative to the Si surface) tapering. Altering the O2 flow rate with constant SF6 flow results in a notable 10° shift in sidewall tapering. Furthermore, SPR-955 photoresist masks provide selectivity of 46:1 with respect to Si and facilitates the fabrication of MEMS devices with precise dimension control ranging from 1 to 100 μm for etching depths up to 42 μm using Cryo DRIE. Understanding the influence of each parameter is crucial for optimizing MEMS device fabrication.

Numerical study of aperture shape effects in deep cryogenic etching of silicon

Profile simulation model for sub-50 nm cryogenic etching of silicon using SF6/O2 inductively coupled plasma

Monte Carlo Simulation of Defects of a Trench Profile in the Process of Deep Reactive Ion Etching of Silicon

Study of high aspect ratio etching in silicon by a mixture of SF6/O2 using a 2-D model based on a Monte Carlo approach.

Cryogenic DRIE Processes for High-Precision Silicon Etching in MEMS Applications

Flux based modeling and simulation of dry etching for fabrication of silicon deep trench structures

Nanosphere lithography on silicon oxide for high aspect ratio cryo etching of vertically-align silicon structures

Multiscale Simulations of Plasma Etching in Silicon Carbide Structures

Modeling and Simulation of Silicon Dry Etching

Monte Carlo simulation and measurement of silicon reactive ion etching profiles

Critical tasks in high aspect ratio silicon dry etching for microelectromechanical systems

Simulation of the Void Shape Evolution of High-Temperature Annealed Silicon Structures by means of a Custom Level-Set Formulation

Effects of deep reactive ion etching parameters on etching rate and surface morphology in extremely deep silicon etch process with high aspect ratio

Simulation of SiO<sub>2</sub> etching in an inductively coupled CF<sub>4</sub> plasma

High Aspect Ratio Si Etching Technique and Application

Simulation of SiO2 etching in an inductively coupled CF4 plasma

Electrochemical etching strategy for shaping monolithic 3D structures from 4H-SiC wafers

Modeling of fluorine-based high-density plasma etching of anisotropic silicon trenches with oxygen sidewall passivation

Molecular dynamics simulation of Si trench etching with SiO2 hard masks

Investigation and Modeling of Etching Through Silicon Carbide Vias (TSiCV) for SiC Interposer and Deep SiC Etching for Harsh Environment MEMS by DoE

Parametric Study, Modeling of Etching Process and Application for Tapered Through-Silicon-via