Abstract:This paper reviews the recent advances in reaction-ion etching (RIE) for application in high-aspect-ratio microfabrication. High-aspect-ratio etching of materials used in micro- and nanofabrication has become a very important enabling technology particularly for bulk micromachining applications, but increasingly also for mainstream integrated circuit technology such as three-dimensional multi-functional systems integration. The characteristics of traditional RIE allow for high levels of anisotropy compared to competing technologies, which is important in microsystems device fabrication for a number of reasons, primarily because it allows the resultant device dimensions to be more accurately and precisely controlled. This directly leads to a reduction in development costs as well as improved production yields. Nevertheless, traditional RIE was limited to moderate etch depths (e.g., a few microns). More recent developments in newer RIE methods and equipment have enabled considerably deeper etches and higher aspect ratios compared to traditional RIE methods and have revolutionized bulk micromachining technologies. The most widely known of these technologies is called the inductively-coupled plasma (ICP) deep reactive ion etching (DRIE) and this has become a mainstay for development and production of silicon-based micro- and nano-machined devices. This paper will review deep high-aspect-ratio reactive ion etching technologies for silicon, fused silica (quartz), glass, silicon carbide, compound semiconductors and piezoelectric materials.

High Aspect Ratio Si Etching Technique and Application

Isotropic Etch for SiO2 Microcantilever Release with ICP System

Recent Advances in Reactive Ion Etching and Applications of High-Aspect-Ratio Microfabrication

Uniform Metal-Assisted Chemical Etching for Ultra-High-Aspect-Ratio Microstructures on Silicon

High Aspect Ratio Etching of Nanopores in PECVD SiC Through AAO Mask

Fabrication of High-Aspect-ratio Grooves in Silicon Using Femtosecond Laser Irradiation and Oxygen-Dependent Acid Etching.

Uniform Vertical Trench Etching on Silicon with High Aspect Ratio by Metal-Assisted Chemical Etching Using Nanoporous Catalysts.

A novel approach for bulk micromachining of 4H-SiC by tool-based electrolytic plasma etching in HF-free aqueous solution

Critical tasks in high aspect ratio silicon dry etching for microelectromechanical systems

A CMOS Compatible Process for Monolithic Integration of High-Aspect-ratio Bulk Silicon Microstructures

Method for Fabricating Micro/Nanostructures Via Scanning Probe Microscope and Anisotropic Wet Etching

Plasma Cyro-etching of High Aspect Ratio Silicon Crystal Structures

Versatile Approach of Silicon Nanofabrication without Resists: Helium Ion-Bombardment Enhanced Etching

Post-CMOS Processing for High-Aspect-Ratio

Fabrication of ultra-high-aspect-ratio nano-walls and nano-structures on silicon substrates

Ion Bombardment As Dominant Factor in Plasma Cryo-Etching for High Aspect Ratio Silicon Structures

Dimensional Constraints on High Aspect Ratio Silicon Microstructures Fabricated by HF Photoelectrochemical Etching

A Study of High Aspect Ratio Si Trench in Cycle Mode Etching with Mask no Loss

Bulk Micromachining Fabrication Platform Using the Integration of DRIE and Wet Anisotropic Etching

Low-temperature plasma etching of high aspect-ratio densely packed 15 to sub-10 nm silicon features derived from PS-PDMS block copolymer patterns

Wafer-Scale Fabrication of Ultra-High Aspect Ratio, Microscale Silicon Structures with Smooth Sidewalls Using Metal Assisted Chemical Etching