Abstract:Electrochemical fabrication of functional three-dimensional micro/nanostructures (3D-MNSs) at the wafer scale is important in the semiconductor industry, but it involves complex interfacial reactions. We demonstrated the use of scanning electrochemical microscopy (SECM), a competitive direct-writing micromachining technique, to achieve this by electrochemically induced chemical etching processes on semiconductor wafers. Besides the complex reaction kinetics, the machining accuracy is a function of various parameters, such as the SECM tip size, tip–substrate distance, etching time, the concentration of etchant precursors, and the coupling surface adsorption and passivation on the semiconductor wafer. Here, we investigated the influences of these factors on the machining profiles of etching pits and established a numerical model to predict and control the machining results. Based on the finite element analysis, the unexpected microbulges in the machining process are demonstrated to be caused by the insufficient mass transport and the precipitation of the etching product. The results are instructive for the controllable microfabrication of 3D-MNSs on the semiconductor wafers.

What problem does this paper attempt to address?

This paper mainly discusses the precise fabrication of functional three-dimensional micro-nanostructures (3D-MNSs) through electrochemical methods in the semiconductor industry. The research team uses scanning electrochemical microscopy (SECM) technology combined with electrochemical-induced chemical etching (ECICE) method to achieve precision processing of semiconductor wafers. The paper points out that the etching accuracy is influenced by various factors, including the size of the SECM probe, the distance between the probe and the substrate, the etching time, the etching precursor concentration, and the semiconductor surface adsorption and passivation. The authors study the influence of these factors on the etching pit shape through experiments and numerical simulations and establish a numerical model to predict and control the etching results. They found that due to the limited solubility of etching products, surface passivation occurs, which affects the etching efficiency and the shape of the etching pit. The paper also proposes that micro-convexities during the etching process are caused by insufficient mass transfer and precipitation of etching products. The paper further discusses in detail the influence of different parameters (such as probe size, distance, time, etchant concentration, etc.) on the etching profile and obtains the corresponding response equations and response surface plots through experiments and statistical analysis. In addition, they demonstrate how to control the fabrication of microstructures by adjusting these parameters, which has guiding significance for the precise control of semiconductor microfabrication.

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