Abstract:The first-generation semiconductor materials represented by silicon (Si) and germanium (Ge) still hold a dominant position in many fields, including micro-electromechanical systems (MEMS) and integrated circuits (ICs). The processing of these materials continues to attract significant research attention for improvements in quality and efficiency. This study proposes a novel hybrid laser-enhanced particle-laden electrochemical machining (LEPL-ECM) process, whereby pulsed laser irradiation is utilized to selectively and locally enhance the electrical conductivity of Ge at specific locations. A neutral electrolyte jet, containing abrasive diamond particles, is applied to the location on the wafer surface opposite the laser irradiation, facilitating a localized and enhanced electrochemical dissolution. The effect of micro-particle erosion effectively removes the generated oxides and potential passivation layers, ensuring continuous and efficient electrochemical reactions. Consequently, high-quality micro-dimples with an entrance diameter of about 380-800 μm, a depth of around 138-300 μm, and a quasi-mirror surface with the roughness (Sa) of as low as 59.8 nm can be achieved within 90 seconds. Furthermore, the effects of the applied voltage, laser power and processing time on the resulting dimple characteristics and surface quality are discussed, along with a detailed morphology characterization. Dense micro-pits, radial streamlined micro-grooves and a special transitional region have been observed on dimple center, sidewall and near the edge, respectively, and the formation mechanism have been analyzed. Finally, a simulation of the electrolyte jet induced fluid pressure and velocity as well as the particle trajectory and distributions within and surrounding the dimple structure was conducted, which reveals that the synergistic mechanism associated with the hybrid material removal process involves both electrochemical corrosion and abrasive erosion.

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