Abstract:The materials that are receiving the most attention in photoelectrochemical water splitting are metallic nanoparticle electrocatalysts (np‐EC) attached to the surface of a semiconductor (SC) light absorber. In these multicomponent systems, the interface between the semiconductor and electrocatalysts critically affects performance. However, the np‐EC/SC interface remains poorly understood as it is complex on atomic scales, dynamic under reaction conditions, and inaccessible to direct experimental probes. This contribution sheds light on how the electrocatalyst/semiconductor interface evolves under reaction conditions by investigating the behavior of nickel electrocatalysts (as nanoparticles and films) deposited on silicon semiconductors. Rigorous electrochemical experiments, interfacial atomistic characterization, and computational modeling are combined to demonstrate critical links between the atomistic features of the interface and the overall performance. It is shown that electrolyte‐induced atomistic changes to the interface lead to (1) modulation of the charge carrier fluxes and a dramatic decrease in the electron/hole recombination rates and (2) a change in the barrier height of the interface. Furthermore, the critical roles of nonidealities and electrocatalyst coverage due to interfacial geometry are explored. Each of these factors must be considered to optimize the design of metal/semiconductor interfaces which are broadly applicable to photoelectrocatalysis and photovoltaic research. Electrochemical testing, atomic interfacial characterization, and computation modeling are used to elucidate the role of electrocatalyst/semiconductor interfaces under photoelectrochemical water oxidation conditions. The mechanisms by which the interface impacts the photovoltage, and the critical design parameters that must be optimized to improve performance, are unearthed. Light is also shed on the impact of operating conditions on the interface.

Photoelectric e ﬀ ect accelerated electrochemical corrosion and nanoimprint processes on gallium arsenide wafers

Photoelectric effect accelerated electrochemical corrosion and nanoimprint processes on gallium arsenide wafers

Spatially-separated and photo-enhanced semiconductor corrosion processes for high-efficient and contamination-free electrochemical nanoimprint lithography

Interface Engineering of Ta3N5 Thin Film Photoanode for Highly Efficient Photoelectrochemical Water Splitting

Large-area homogeneous corrosion process for electrochemical nanoimprint lithography on GaAs wafer by modulating contact pressure

Plasma etching of III-V semiconductors and mechanism of crystalline damage

Plasma etching ofⅢ-Ⅴsemiconductors and mechanism of crystalline damage

Anti-Photoelectrochemical (A-Pec) Etching

Photoelectrochemical Microetching of N-Gaas

Demystifying metal-assisted chemical etching of GaN and related heterojunctions

Luminescence Enhancement of Plasma-Etched InAsP∕InGaAsP Quantum Wells

Pulse Potential Confined Electrochemical Polishing on Gallium Arsenide Wafer

Photoelectrochemical (PEC) etching of Ga2O3

CMOS-Compatible Electrochemical Nanoimprint:High Throughput Fabrication of Ordered Microstructures on Semiconductor Wafer by Using a Glassy Carbon Mold

Effects of a photo-assisted electrochemical etching process removing dry-etching damage in GaN

Balancing the Photo‐Induced Carrier Transport Behavior at Two Semiconductor Interfaces for Dual‐Polarity Photodetection

Photoelectrochemical Etching of Gallium Nitride Surface by Complexation Dissolution Mechanism

Metal-assisted Photochemical Etching of Gallium Nitride Using Electrodeposited Noble Metal Nanoparticles As Catalysts

Metal-assisted Photochemical Etching of GaN Nanowires: the Role of Metal Distribution

Tuning the Charge Transfer Dynamics of the Nanostructured GaN Photoelectrodes for Efficient Photoelectrochemical Detection in the Ultraviolet Band

Characterizing the Geometry and Quantifying the Impact of Nanoscopic Electrocatalyst/Semiconductor Interfaces under Solar Water Splitting Conditions