Photoelectrochemical Microetching of N-Gaas

Wang Weijiang,Wang Jiangtao,Jin Chenghe,Lu Shouyun
DOI: https://doi.org/10.3866/pku.whxb19930318
1993-01-01
Acta Physico-Chimica Sinica
Abstract:Microphotoelectrochemical etching of n-GaAs by focused He-Ne laser was investigated. An etched pattern was scribed on the n-GaAs surface while the sample moved in X-Y two directions by means of two motors controlled by microcomputer. The diameter of the etched holes was 2 mu m. The intensity of the laser light, the concentrations of different etchants, such as KOH, H2SO4, HCl and KCl etc., the etching time, the electrode potentials effected the diameters and depths of the etched holes. The experiment results were discussed and analyzed in this paper.
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