Abstract:The anodic dissolution of silicon in acidic electrolytes is a well-known technology enabling the silicon machining to be accurately controlled down to the micrometer scale in low-doped n-type silicon electrodes. Attempts to scale down this technology to the submicrometer scale has shown to be challenging, though it premises to enable the fabrication of meso and nano structures/systems that would greatly impact the fields of biosensors and nanomedicine. In this work, we report on the electrochemical etching at high anodic voltages (up to 40 V) of two-dimensional regular arrays of millions pores per square centimeter (up to 30 × 106 cm-2) with sub-micrometric diameter (down to ~860 nm), high depth (up to ~40 μm), and high aspect-ratio (up to ~45) using low-doped n-type silicon electrodes (resistivity 3-8 Ω cm). The use of high anodic voltages, which are over one order of magnitude higher than that commonly used in electrochemical etching of silicon, tremendously improves hole focusing at the pore tips during the etching and enables, in turn, the control of electrochemical etching of submicrometer-sized pores when spatial period reduces below 2 μm. A theoretical model allows experimental results to be interpreted in terms of an electric-field-enhanced focusing of holes at the tip apex of the pores at high anodic voltages, with respect to the pore base, which leads to a smaller curvature radius of the tip apex and enables, in turn, the etching of pore tips to be preferentially sustained over time and space.

Photo-electrochemical Etching of Macroporous Silicon Arrays Used in Silicon Microchannel Plates

Isotropic Etch for SiO2 Microcantilever Release with ICP System

Fabrication of Ordered Macropore Arrays in n-Type Silicon Wafer by Anodic Etching Using Double-Tank Electrochemical Cell

Dimensional Constraints on High Aspect Ratio Silicon Microstructures Fabricated by HF Photoelectrochemical Etching

High Anodic-Voltage Focusing of Charge Carriers in Silicon Enables the Etching of Regularly-Arranged Submicrometer Pores at High Density and High Aspect-Ratio

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication.

Optimization of anodic current density for growth of thick p-type macropore porous silicon

Electrochemically Etched Pore Array in Silicon with Large Spacing and High-Aspect-ratio

Transmission electron microscopy studies of photochemically etched porous silicon

The Optical Properties of Porous Silicon Produced by Metal-Assisted Anodic Etching

Hydrofluoric Acid Free Synthesis of Macropores on Silicon by Chemical Vapor Deposition and Their Photoluminescence

An Etchant for Delineation of Flow Pattern Defects in Heavily Doped N-Type Silicon Wafers

Black Silicon with Controllable Macropore Array for Enhanced Photoelectrochemical Performance

Ultrafast fabrication of high-aspect-ratio macropores in P-type silicon: toward the mass production of microdevices

Research on Pt Nanoparticles-Assisted Chemical Etching of Heavily Doped p-Type Monocrystalline Silicon

Wafer-Scale Fabrication of Ultra-High Aspect Ratio, Microscale Silicon Structures with Smooth Sidewalls Using Metal Assisted Chemical Etching

Pore size modulation in electrochemically etched macroporous p-type silicon monitored by FFT impedance spectroscopy and Raman scattering.

High Aspect Ratio Si Etching Technique and Application

Uniform Vertical Trench Etching on Silicon with High Aspect Ratio by Metal-Assisted Chemical Etching Using Nanoporous Catalysts.

Fabrication of Silicon Nanopore Arrays Using A Combination of Dry and Wet Etching

Anisotropic Etching of Three-Dimensional Shapes in Silicon - the Important Role of Galvanic Interaction