Abstract:The anodic dissolution of silicon in acidic electrolytes is a well-known technology enabling the silicon machining to be accurately controlled down to the micrometer scale in low-doped n-type silicon electrodes. Attempts to scale down this technology to the submicrometer scale has shown to be challenging, though it premises to enable the fabrication of meso and nano structures/systems that would greatly impact the fields of biosensors and nanomedicine. In this work, we report on the electrochemical etching at high anodic voltages (up to 40 V) of two-dimensional regular arrays of millions pores per square centimeter (up to 30 × 106 cm-2) with sub-micrometric diameter (down to ~860 nm), high depth (up to ~40 μm), and high aspect-ratio (up to ~45) using low-doped n-type silicon electrodes (resistivity 3-8 Ω cm). The use of high anodic voltages, which are over one order of magnitude higher than that commonly used in electrochemical etching of silicon, tremendously improves hole focusing at the pore tips during the etching and enables, in turn, the control of electrochemical etching of submicrometer-sized pores when spatial period reduces below 2 μm. A theoretical model allows experimental results to be interpreted in terms of an electric-field-enhanced focusing of holes at the tip apex of the pores at high anodic voltages, with respect to the pore base, which leads to a smaller curvature radius of the tip apex and enables, in turn, the etching of pore tips to be preferentially sustained over time and space.

Electrochemically Etched Pore Array in Silicon with Large Spacing and High-Aspect-ratio

Fabrication of Silicon Nanopore Arrays Using A Combination of Dry and Wet Etching

Massive Fabrication of Silicon Nanopore Arrays with Tunable Shapes

Ultrafast fabrication of high-aspect-ratio macropores in P-type silicon: toward the mass production of microdevices

High Anodic-Voltage Focusing of Charge Carriers in Silicon Enables the Etching of Regularly-Arranged Submicrometer Pores at High Density and High Aspect-Ratio

Dimensional Constraints on High Aspect Ratio Silicon Microstructures Fabricated by HF Photoelectrochemical Etching

Graphene Masks As Passivation Layers in the Electrochemical Etching of Silicon

Fabrication Of Inverted-Pyramid Silicon Nanopore Arrays With Three-Step Wet Etching

Fabrication of Silicon Nanopore Arrays with Three-Step Wet Etching

High Aspect Ratio Etching of Nanopores in PECVD SiC Through AAO Mask

A novel method to fabricate silicon nanopore arrays

High aspect ratio arrays of Si nano-pillars using displacement Talbot lithography and gas-MacEtch

Fabrication of Nanopore and Nanopore Arrays in Si Substrate by Wet Etching Method at Wafer Scale

Fabrication of ultrahigh-aspect-ratio and periodic silicon nanopillar arrays using dislocation lithography and deep reactive-ion etching

Controllable Fabrication of Pyramidal Silicon Nanopore Arrays and Nanoslits for Nanostencil Lithography

Uniform Vertical Trench Etching on Silicon with High Aspect Ratio by Metal-Assisted Chemical Etching Using Nanoporous Catalysts.

A Two-Step Etching Method to Fabricate Nanopores in Silicon

Wafer-Scale Fabrication of Ultra-High Aspect Ratio, Microscale Silicon Structures with Smooth Sidewalls Using Metal Assisted Chemical Etching

Achieving a sub-10 nm nanopore array in silicon by metal-assisted chemical etching and machine learning

Fabrication of Ordered Macropore Arrays in n-Type Silicon Wafer by Anodic Etching Using Double-Tank Electrochemical Cell

Photo-electrochemical Etching of Macroporous Silicon Arrays Used in Silicon Microchannel Plates