Abstract:The anodic dissolution of silicon in acidic electrolytes is a well-known technology enabling the silicon machining to be accurately controlled down to the micrometer scale in low-doped n-type silicon electrodes. Attempts to scale down this technology to the submicrometer scale has shown to be challenging, though it premises to enable the fabrication of meso and nano structures/systems that would greatly impact the fields of biosensors and nanomedicine. In this work, we report on the electrochemical etching at high anodic voltages (up to 40 V) of two-dimensional regular arrays of millions pores per square centimeter (up to 30 × 106 cm-2) with sub-micrometric diameter (down to ~860 nm), high depth (up to ~40 μm), and high aspect-ratio (up to ~45) using low-doped n-type silicon electrodes (resistivity 3-8 Ω cm). The use of high anodic voltages, which are over one order of magnitude higher than that commonly used in electrochemical etching of silicon, tremendously improves hole focusing at the pore tips during the etching and enables, in turn, the control of electrochemical etching of submicrometer-sized pores when spatial period reduces below 2 μm. A theoretical model allows experimental results to be interpreted in terms of an electric-field-enhanced focusing of holes at the tip apex of the pores at high anodic voltages, with respect to the pore base, which leads to a smaller curvature radius of the tip apex and enables, in turn, the etching of pore tips to be preferentially sustained over time and space.

Fabrication Of Inverted-Pyramid Silicon Nanopore Arrays With Three-Step Wet Etching

Fabrication of Silicon Nanopore Arrays with Three-Step Wet Etching

Fabrication of Silicon Nanopore Arrays Using A Combination of Dry and Wet Etching

Massive Fabrication of Silicon Nanopore Arrays with Tunable Shapes

A novel method to fabricate silicon nanopore arrays

A Two-Step Etching Method to Fabricate Nanopores in Silicon

Fabrication of Sub-Nanometer Pores on Graphene Membrane for Ion Selective Transport

Fabrication of Nanopore and Nanopore Arrays in Si Substrate by Wet Etching Method at Wafer Scale

Controllable Fabrication of Pyramidal Silicon Nanopore Arrays and Nanoslits for Nanostencil Lithography

Fabrication of nanopores and nanoslits with feature sizes down to 5 nm by wet etching method

Fabrication of Silicon Nanopores with Tunable Shapes and Sizes

Electrochemically Etched Pore Array in Silicon with Large Spacing and High-Aspect-ratio

Shape Formation Analysis of Silicon Nanopore Fabricated by Anisotropic Wet Etching Method

Controllable Shrinking of Inverted-Pyramid Silicon Nanopore Arrays by Dry-Oxygen Oxidation

Fabrication of silicon-based multilevel nanostructures via scanning probe oxidation and anisotropic wet etching

Achieving a sub-10 nm nanopore array in silicon by metal-assisted chemical etching and machine learning

Fabrication of Polygonal Nanoholes by Localized Mask-Free Wet Anisotropic Etching

Fabrication of Solid State Nanopore in Thin Silicon Membrane Using Low Cost Multistep Chemical Etching

High Anodic-Voltage Focusing of Charge Carriers in Silicon Enables the Etching of Regularly-Arranged Submicrometer Pores at High Density and High Aspect-Ratio

Fabrication of Sub-20 Nm Nanopore Arrays in Membranes with Embedded Metal Electrodes at Wafer Scales

Fabrication of Hourglass-Shaped Solid-State Nanopores