Abstract:GaN and related semiconductors have become an increasingly prominent material for a wide range of active and passive devices from optoelectronics to high frequency and power electronics as well as photocatalysis. Regardless of the application, anisotropic etching is required for micro and nano structuring, currently performed by reactive ion etching (RIE). Alternately, metal-assisted chemical etching (MacEtch) is an open-circuit plasma-free anisotropic etching method that has demonstrated high aspect ratio device structures devoid of plasma-induced damage found in RIE. This paper presents an in-depth study of the ensemble electrochemical mechanisms that govern the photo-enhanced MacEtch process of GaN and related heterojunctions. Through in-depth experimental investigations, modeling and simulations, the effects of local cathode and anode design, energy-band alignments, and solution chemistry on MacEtch are correlated with the underlying electronic mechanisms of carrier generation, annihilation, transport, and extraction, establishing a fundamental framework for parametrized prediction of system behavior. These findings carry profound implications for tailored design of photoelectrochemical processes employed not just for uniformly etching wide/ultrawide bandgap materials but more broadly for semiconductor-based photocatalytic reactions in general. One-pot photo-enhanced MacEtching of AlInGaN multi-heterojunction device structures including superlattices and multi-quantum wells are demonstrated.

Effects of a photo-assisted electrochemical etching process removing dry-etching damage in GaN

Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices

Excellent wet etching technique using pulsed anodic oxidation for homoepitaxially grown GaN layer

Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

Photoelectrochemical etching of ultra-wide bandgap β-Ga2O3 semiconductor in phosphoric acid and its optoelectronic device application

Photoelectrochemical (PEC) etching of Ga2O3

A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication

Investigation of Dislocations and Defects in Epitaxial Lateral Overgrown GaN by Photoelectrochemical Wet Etching

Etching Damage Analysis and Optimization of Inductively Coupled Plasma Etching of GaN

Photoelectric effect accelerated electrochemical corrosion and nanoimprint processes on gallium arsenide wafers

Enhancement Mechanism of Chemical Mechanical Polishing for GaN Based on Electro-Fenton Reaction

Highly efficient and atomic scale polishing of GaN via plasma-based atom-selective etching

Performance Recovery of p‐GaN Etch‐Induced Degradation via Atomic Layer Deposition In Situ N2 Plasma and Postanneal‐Assisted Passivation

High Selectivity, Low Damage ICP Etching of p-GaN over AlGaN for Normally-off p-GaN HEMTs Application

Effect of Dislocations in Photoelectrochemical Etching Process of N-Type Gan

Effect of photocatalytic oxidation technology on GaN CMP

Photoelectric e ﬀ ect accelerated electrochemical corrosion and nanoimprint processes on gallium arsenide wafers

Demystifying metal-assisted chemical etching of GaN and related heterojunctions

Effects of FeOOH Nanofilms on Photoelectrochemical Reaction Using Gallium Nitride as Photoelectrodes

Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode*

Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis