Non‐Invasive Photodelamination of van der Waals Semiconductors for High‐Performance Electronics

Ning Xu,Xudong Pei,Lipeng Qiu,Li Zhan,Peng Wang,Yi Shi,Songlin Li
DOI: https://doi.org/10.1002/adma.202300618
IF: 29.4
2023-04-06
Advanced Materials
Abstract:Atomically thin two‐dimensional (2D) van der Waals semiconductors are promising candidate materials for post‐silicon electronics. However, it remains challenging to attain completely uniform monolayer semiconductor wafers free of over‐grown islands. Here, we report the observation of the energy funneling effect and ambient photodelamination phenomenon in inhomogeneous few‐layer WS2 flakes under low illumination fluencies down to several nW/μm2 and its potential as a non‐invasive post‐etching strategy for selectively stripping the local excessive overlying islands. Photoluminescent tracking on the photoetching traces reveals relatively fast etching rates around 0.3−0.8 μm/min at varied temperatures and an activation energy of 1.7 eV. By using crystallographic and electronic characterization, we also confirm the non‐invasive nature of the low‐power photodelamination and the highly preserved lattice quality in the as‐etched monolayer products, featuring a comparable average density of atomic defects (∼4.2×1013 cm−2) to pristine flakes and a high electron mobility up to 80 cm2 V−1 s−1 at room temperature. This approach opens a non‐invasive photoetching route for thickness uniformity management in 2D van der Waals semiconductor wafers for electronic applications. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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