Abstract:The method established previously for studying the etching rates of micro-scale silicon and silica was used to study the etching process of silicon and silica on the Si(100) surface. Photolithography was used to pattern a positive photoresist mask to confine the etching area, and the atomic force microscopy was used to probe the etched surface. The lateral etching rate of silicon or silica on the silicon surface was defined, and the lateral and longitudinal etching rates of silicon and silica on the Si(100) surface in 40% ammonium fluoride aqueous solution were measured. The effect of the dissolved oxygen on the etching rates was studied by bubbling the solution with high purity nitrogen. The lateral and longitudinal etching rates of silicon and silica on the (100) surface increase with temperatures except for the lateral etching rate of silica in a N-2-bubbled solution which probably reaches the limit of diffusion controlled reaction. The etching rates of silicon and thermal silica on the Si(100) surface show remarkable difference with that on the Si (111) surface in both air-saturated and N-2-bubbled solutions. The apparent activation energies for the silicon and silica etching processing in ammonium fluoride solution were obtained from the etching rates at different temperatures in the range 20.6 similar to 34.1degreesC. The similarity of the apparent activation energies for the etching processing of silicon and silica on the (100) surface to that on the (111) surface probably suggests that the rate-determined-step is the same in both cases. A lot of gas bubbles are seen to aggregate on the surface in silicon dissolution process at 38.2degreesC, and it is found that the gas bubbles have great influence on the silicon etching rate. The formation of bubbles accelerates the silicon dissolution at the beginning but blocks the etching as the bubbles gradually aggregate on the surface.

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Nanomanufacturing of Silicon Surface with a Single Atomic Layer Precision Via Mechanochemical Reactions

Anisotropic Etching of Three-Dimensional Shapes in Silicon - the Important Role of Galvanic Interaction

Role of mechanically-driven distorted microstructure in mechanochemical removal of silicon

Study of Anisotropic Etching of (100) Si with Ultrasonic Agitation

Porosification-Induced Back-Bond Weakening in Chemical Etching of N-Si(111)

Chemical Etching Processes at the Dynamic GaAs/Electrolyte Interface in the Electrochemical Direct-Writing Micromachining

Monte Carlo study of kinetic smoothing during dissolution and etching of the Kossel (100) and silicon (111) surfaces

Toward Controllable Wet Etching of Monocrystalline Silicon: Roles of Mechanically Driven Defects

A new theory for the anisotropic etching of silicon and some underdeveloped chemical micromachining concepts

Nanofaceting of unit cells and temperature dependence of the surface reconstruction and morphology of Si(105) and (103)

Wet anisotropic etching characteristics of Si{111} in NaOH-based solution for silicon bulk micromachining

Orientation-dependent surface morphology of crystalline silicon during anisotropic etching using a continuous cellular automaton

The Lateral and Longitudinal Etching Rates of Silicon and Silica on Si(100) Surface

Mechanism of chemical and mechanical mutual promotion in photocatalysis-assisted chemical mechanical polishing for single-crystal SiC

Effects of deep reactive ion etching parameters on etching rate and surface morphology in extremely deep silicon etch process with high aspect ratio

Sub-Micron Imaging Of Sub-Surface Nanocrystalline Structure In Silicon

Effects of Chemical Etching on Surface Structure and Tribological Behavior of Silicate Substrates

Molecular dynamics study of crystal orientation effect on surface generation mechanism of single-crystal silicon during the nano-grinding process

Enhanced etching characteristics of Si{100} in NaOH-based two-component solution