A Study of High Aspect Ratio Si Trench in Cycle Mode Etching with Mask no Loss

Zhongwei Jiang,Wang Jing,Litian Xu,Xiaohui Li,Zhang Teng,Qin Hui
DOI: https://doi.org/10.1109/CSTIC61820.2024.10532051
2024-03-17
Abstract:Accurate and strict etching processes are the development requirements for the continuous integration of semiconductor devices. In this paper, we based on CH3F/Ar dep and implemented it to the plasma etching process of dep-etch cycle, achieving a high aspect ratio and depth controllable Si trench etching with mask no-loss.
Materials Science,Engineering,Physics
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