Abstract:Cryogenic deep reactive ion etching (Cryo DRIE) of silicon has become an enticing but challenging process utilized in front-end fabrication for the semiconductor industry. This method, compared to the Bosch process, yields vertical etch profiles with smoother sidewalls not subjected to scalloping, which are desired for many microelectromechanical systems (MEMS) applications. Smoother sidewalls enhance electrical contact by ensuring more conformal and uniform sidewall coverage, thereby increasing the effective contact area without altering contact dimensions. The versatility of the Cryo DRIE process allows for customization of the etch profiles by adjusting key process parameters such as table temperature, O2 percentage of the total gas flow rate (O2 + SF6), RF bias power, and process pressure. In this work, we undertake a comprehensive study of the effects of Cryo DRIE process parameters on the trench profiles in the structures used to define cantilevers in MEMS devices. Experiments were performed with an Oxford PlasmaPro 100 Estrelas ICP-RIE system using positive photoresist SPR-955 as a mask material. Our findings demonstrate significant influences on the sidewall angle, etch rate, and trench shape due to these parameter modifications. Varying the table temperature between -80°C and -120°C under a constant process pressure of 10 mTorr changes the etch rate from 3 to 4 μm/min, while sidewall angle changes by ~2°, from positive ( 90° relative to the Si surface) tapering. Altering the O2 flow rate with constant SF6 flow results in a notable 10° shift in sidewall tapering. Furthermore, SPR-955 photoresist masks provide selectivity of 46:1 with respect to Si and facilitates the fabrication of MEMS devices with precise dimension control ranging from 1 to 100 μm for etching depths up to 42 μm using Cryo DRIE. Understanding the influence of each parameter is crucial for optimizing MEMS device fabrication.

Bulk Micromachining Fabrication Platform Using the Integration of DRIE and Wet Anisotropic Etching

A molded surface-micromachining and bulk etching release (MOSBE) fabrication platform on (1 1 1) Si for MOEMS

A novel convex corner compensation for wet anisotropic etching on (100) silicon wafer

Design and fabrication of MEMS devices using the integration of MUMPs, trench-refilled molding, DRIE and bulk silicon etching processes

Advanced plasma processing combined with trench isolation technology for fabrication and fast prototyping of high aspect ratio MEMS in standard silicon wafers

Cryogenic DRIE Processes for High-Precision Silicon Etching in MEMS Applications

Integration of the DRIE, MUMPs, and bulk micromachining for superior micro-optical systems

Improvement on the Uniformity of Deep Reactive Ion Etch for Electrically Isolated Silicon-Based Substrates

Anisotropic Wet Etching for Micro-Fabrication

High Aspect Ratio Si Etching Technique and Application

A Novel Isolation Technology in Bulk Micromachining Using Deep Reactive Ion Etching and A Polysilicon Refill

Patterned Microstructure Array Fabrication By Using A Novel Standing Surface Acoustic Wave Device

Multi-layer Microstructure Fabrication by Combining Bulk Silicon Micromachining and UV-LIGA Technology

Complex microstructure fabrication by integrating silicon anisotropic etching and UV-LIGA technology

Electrochemical etching strategy for shaping monolithic 3D structures from 4H-SiC wafers

The SOI DAWN process for three-dimensional silicon micromachining and its applications

Single wafer fabrication of a symmetric double-sided beam-mass structure using DRIE and wet etching by a novel vertical sidewall protection technique

Ultra high aspect-ratio and thick deep silicon etching (UDRIE)

Wafer level bulk titanium ICP etching using SU8 as an etching mask

Post-CMOS Process for High-Aspect-ratio Monolithically Integrated Single Crystal Silicon Microstructures

Chemical Etching Processes at the Dynamic GaAs/Electrolyte Interface in the Electrochemical Direct-Writing Micromachining