Abstract:Isotropic wet etching is a popular technique to fabricate microfluidic channels in silicon wafers that are used in various fields of engineering and medicine. In this work, SiO 2 and Cr thin films, along with positive photoresist (SiO 2 /Cr/PR), is employed as a novel masking layer on 3-inch silicon {100} wafers. SiO 2 and Cr thin films are deposited through thermal oxidation and DC sputtering, respectively, and the photoresist is deposited by spin coating, followed by patterning using UV-photolithography. Here, a mixture of HF, HNO 3 , and CH 3 COOH, known as hydrofluoric acid–nitric acid–acetic acid solution (HNA solution), is used to fabricate microfluidic channel on silicon wafers via isotropic wet etching. The volume of HF is maintained constant, and the volumes of HNO 3 and CH 3 COOH are varied in the HNA solution. The etching of the silicon wafers is performed in various compositions of HNA solution for 5, 10, and 15 min, respectively, and the resultant etching parameters and surface features are investigated. The vertical and lateral etch rates increased with the increment of HNO 3 volume in HNA solution. Among all HNA solutions, the solution of composition 10:20:20 (HF: HNO 3 : CH 3 COOH) delivered a better outcome in terms of surface quality. The derived microfluidic channel using the mentioned 10:20:20 HNA solution comprised sharp edges and a defect-free surface.

Study on HF Vapor-Phase Etching for Suspended Nano Structure Fabrication

Etching Rate Of Sacriflcial Layer In Nanometer

Experimental Study on Evolution of Chemical Structure Defects and Secondary Contaminative Deposition during HF-Based Etching

Modified Model for Sacrificial Layer Etching

Sacrificial layer etching in bubble structure

The experimental study and analysis of the etching for SiO2 sacrificial layer

Design and fabrication of a nanofluidic channel by selective thermal oxidation and etching back of silicon dioxide made on a silicon substrate

Anisotropic Vapor HF etching of silicon dioxide for Si microstructure release

Experimental study on HF etching of fused silica

The Effects of Diffusion Coefficient on the Etching Process of Sacrificial Oxide Layers

Reactive Ion Beam Etching of Hfo2 Film Using Ar/Chf3 Gas Chemistries

Research on Pt Nanoparticles-Assisted Chemical Etching of Heavily Doped p-Type Monocrystalline Silicon

Influence Of Fabrication Parameters On The Nanostructure Of Si-Nws Under Hf/Fe(No3)(3) Etching System

Fabrication of Sub-10 Nm Planar Nanofluidic Channels Through Native Oxide Etch and Anodic Wafer Bonding

Morphology of etch-pits on HF-HNO3-H2O vapor-etched diamond wire sawn multi-crystalline silicon wafers

Atmospheric Gas-Phase Catalyst Etching of SiO 2 for Deep Microfabrication Using HF Gas and Patterned Photoresist

Temperature Dependence on Dry Etching of Hafnium Oxide Using an Inductively Coupled Plasma

Fabrication of the microfluidic channels in silicon wafers using isotropic wet etching method: the impact of the composition of HNA solution on etching

Etching Si Wafer Using Atmospheric Pressure RF Cold Plasma Jet

Reactive Ion Etching of HfO2 Films

Method for Fabricating Micro/Nanostructures Via Scanning Probe Microscope and Anisotropic Wet Etching