Abstract:The method established previously for studying the etching rates of micro-scale silicon and silica was used to study the etching process of silicon and silica on the Si(100) surface. Photolithography was used to pattern a positive photoresist mask to confine the etching area, and the atomic force microscopy was used to probe the etched surface. The lateral etching rate of silicon or silica on the silicon surface was defined, and the lateral and longitudinal etching rates of silicon and silica on the Si(100) surface in 40% ammonium fluoride aqueous solution were measured. The effect of the dissolved oxygen on the etching rates was studied by bubbling the solution with high purity nitrogen. The lateral and longitudinal etching rates of silicon and silica on the (100) surface increase with temperatures except for the lateral etching rate of silica in a N-2-bubbled solution which probably reaches the limit of diffusion controlled reaction. The etching rates of silicon and thermal silica on the Si(100) surface show remarkable difference with that on the Si (111) surface in both air-saturated and N-2-bubbled solutions. The apparent activation energies for the silicon and silica etching processing in ammonium fluoride solution were obtained from the etching rates at different temperatures in the range 20.6 similar to 34.1degreesC. The similarity of the apparent activation energies for the etching processing of silicon and silica on the (100) surface to that on the (111) surface probably suggests that the rate-determined-step is the same in both cases. A lot of gas bubbles are seen to aggregate on the surface in silicon dissolution process at 38.2degreesC, and it is found that the gas bubbles have great influence on the silicon etching rate. The formation of bubbles accelerates the silicon dissolution at the beginning but blocks the etching as the bubbles gradually aggregate on the surface.

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Flow Effects on Silicate Dissolution and Ion Transport at an Aqueous Interface

Control of water droplet motion by alteration of roughness gradient on silicon wafer by laser surface treatment

Synthesis of scalable microdroplets with fluid instability of shearing flow in microfluidics

Long-range Spontaneous Droplet Self-Propulsion on Wettability Gradient Surfaces

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Atomistic understanding of interfacial processing mechanism of silicon in water environment: A ReaxFF molecular dynamics simulation

Molecular Dynamics Study of Interaction between Fluorine Atoms and Silicon Surface

Driving Liquid Droplets on Microstructured Gradient Surface by Mechanical Vibration

Self-propelled Droplet Behavior During Condensation on Superhydrophobic Surfaces

Flow and Real-Time Substance Transfer at the Droplet-Level Microinterface during Contaminant Extraction

Real-time Manipulation of Liquid Droplets using Photo-responsive Surfactant

Internal flow in sessile droplets induced by substrate oscillation: towards enhanced mixing and mass transfer in microfluidic systems

Conversion of surface energy and experimental investigation on the self-motion behaviors of liquid droplets on gradient surfaces

The Lateral and Longitudinal Etching Rates of Silicon and Silica on Si(100) Surface

Molecular Dynamics Simulations of Influence of Surface Temperature on Fluorine Etching of Silicon

Anisotropic Vapor HF etching of silicon dioxide for Si microstructure release

Fabrication of Super-hydrophobic Surfaces for Microfluidic Chips

Light-induced manipulation of ultra-low surface tension droplets on stable quasi-liquid surfaces

Dynamic Melting of Freezing Droplets on Ultraslippery Superhydrophobic Surfaces.