Abstract:A simple procedure has been developed for the processing of silicon wafers in order to facilitate the spatially resolved growth of thin solid films on their surfaces. Specifically, a combination of silylation and UV/ozonolysis was tested as a way to control the concentration of the surface hydroxo groups required for subsequent atomic layer deposition (ALD) of metals or oxides. Water contact angle measurements were used to evaluate the hydrophilicity/hydrophobicity of the surface, a proxy for OH surface coverage, and to optimize the UV/ozonolysis treatment. Silylation with hexamethyldisilazane, trichloro(octadecyl)silane, or trimethylchlorosilane was found to be an efficient way to block the hydroxo sites and to passivate the underlying surface, and UV/O3 treatments were shown to effectively remove the silylation layer and to regain the surface reactivity. Both O3 and 185 nm UV radiation were determined necessary for the removal of the silylation layer, and additional 254 nm radiation was found to enhance the process. Attenuated total reflection-infrared absorption spectroscopy was employed to assess the success of the silylation and UV/O3 removal steps, and atomic force microscopy data provided evidence for the retention of the original smoothness of the surface. Selective growth of HfO2 films via TDMAHf + H2O ALD was seen only on the UV/O3 treated surfaces; total inhibition of the deposition was observed on the untreated silylated surfaces (as determined by x-ray photoelectron spectroscopy and ellipsometry). Residual film growth was still detected on the latter if the ALD was carried out at high temperatures (250 °C), because the silylation layer deteriorates under such harsh conditions and forms surface defects that act as nucleation sites for the growth of oxide grains (as identified by electron microscopy and scanning electron microscopy). We believe that the silylation-UV/O3 procedure advanced here could be easily implemented for the patterning of surfaces in many microelectronic applications.

Reaction of water with hydrofluoric acid treated silicon(111) and (100) surfaces

Running droplet of interfacial chemical reaction flow

Fluorine‐containing species on the hydrofluoric acid etched silicon single‐crystal surface

Studies of atomic and molecular fluorine reactions on silicon surfaces

Surface Orientation and Temperature Effects on the Interaction of Silicon with Water: Molecular Dynamics Simulations Using ReaxFF Reactive Force Field.

The Lateral and Longitudinal Etching Rates of Silicon and Silica on Si(100) Surface

Room-temperature Atmospheric Oxidation of Si Nanocrystals after HF Etching

Stability of the Si–H Bond on the Hydrogen-Terminated Si(1 1 1) Surface Studied by Sum Frequency Generation

Molecular Dynamics Study of Interaction between Fluorine Atoms and Silicon Surface

Initial Surface Reactions in Atomic Layer Deposition of Hfsixoy and Hfo2: A Comparative Study by Density Functional Theory

Oxidation Process of HfO/sub 2//sio/sub 2//si Structures Observed by High-Resolution RBS

Direct Measurement of the Etching Rates on Si(111) and Silicon Dioxide Surfaces in 40% Ammonium Fluoride Aqueous Solution Via Atomic Force Microscopy

Oxidation Mechanism Of Si(111)-7 X 7 By Water: A Theoretical Study

Direct Si oxidation with fluorine incorporation using an argon excimer VUV source

Accumulation and removal of Si impurities on β -Ga2O3 arising from ambient air exposure

The Effect of De-Ionized Water Rinsing after Immersion in Hydrofluoric Acid on the Electrical Conductivity of Silicon Nanomembranes

Formation of alkylsiloxane self-assembled monolayers on Si3N4

Spatial resolution in thin film deposition on silicon surfaces by combining silylation and UV/ozonolysis

Surface termination and hydrogen bubble adhesion on Si(100) surfaces during anisotropic dissolution in aqueous KOH

Reaction of Silicon Dioxide with Water: A Matrix Isolation Infrared and Density Functional Theoretical Study

Superhydrophobic Surfaces Prepared by Microstructuring of Silicon Using a Femtosecond Laser.