Abstract:Even though the decomposition of disilane on silicon surfaces has been extensively studied, the molecular mechanism for its decomposition has not been fully resolved. The general view motivated partly by spectroscopic data is that decomposition occurs through silicon-silicon bond dissociation although there is evidence from kinetics that silicon-hydrogen bond dissociation is important, and perhaps even dominant. Thus, we reexamine the assignment of the experimental vibrational peaks observed in disilane and silane adsorption in order to assess the evidence for the silicon hydride species that are formed during decomposition. We calculate the vibrational density of states for a number of silicon hydride species on the Si(100)-(2x1) surface using Car-Parrinello molecular dynamics. We obtain the calculated vibrational frequency in the adiabatic limit by extrapolating to zero orbital mass, calibrating our method using the well-established monohydride peak. The calculated vibrational frequencies of the monohydride are in good agreement experimental data. Our results show that the spectroscopic data for silicon hydrides does not preclude the occurrence of Si(2)H(5) on the surface thus providing evidence for silicon-hydrogen bond dissociation during disilane adsorption. Specifically, we find that an experimentally observed vibrational peak at 2150 cm(-1) that has generally been attributed to the trihydride SiH(3) is more likely to be due to Si(2)H(5). Our results also clear up the assignment of two peaks for monohydride species adsorbed at the edge of a growing terrace, and a peak for the dihydride species adsorbed in the interdimer configuration.

Stability of the Si–H Bond on the Hydrogen-Terminated Si(1 1 1) Surface Studied by Sum Frequency Generation

Characterization of Hydrogen-Terminated Si(111) Surfaces by Sum-Frequency Surface Vibrational Spectroscopy

Kinetics of Molecular Hydrogen Dissociative Adsorption on Si(111) Studied by Sum-Frequency Vibrational Spectroscopy and Second Harmonic Generation

Effect of Hydrogen Radical Exposure on the Interfacial and Bulk Structure of A-Si:H/a-sinx:h Multilayer Films

Reaction of water with hydrofluoric acid treated silicon(111) and (100) surfaces

Behavior of hydrogen during laser crystallization and RTA of a-Si: H SOI

Revisiting the vibrational spectra of silicon hydrides on Si(100)-(2x1) surface: What is on the surface when disilane dissociates?

Fluorine‐containing species on the hydrofluoric acid etched silicon single‐crystal surface

The stability of strained H:Si(105) and H:Ge(105) surfaces

Room-temperature Atmospheric Oxidation of Si Nanocrystals after HF Etching

Hydrogen inserted into the Si(100)-2x1-H surface: A first-principles study

First-Principles Study on the Surface Chemistry of 1.4 Nm Silicon Nanocrystals: Case of Hydrosilylation

Initial Processes of Hydrogen Adsorption on Si(100) Surface

Initial Processes of Hydrogen Chemisorption on Si(111) Surface

Surface termination and hydrogen bubble adhesion on Si(100) surfaces during anisotropic dissolution in aqueous KOH

Hydrogen Bonding in Hydrogenated Amorphous Silicon Thin Films Prepared at Different Precursor Gas Temperatures with Undiluted Silane

Quantum Chemical Study of Adsorption and Dissociation of HfCl4 and H2O on Ge/Si(100) − (2×1): Initial Stage of Atomic Layer Deposition of HfO2 on SiGe Surface

Theoretical study of hydrogenated 3C–SiC(001)-(2×1) surface

Formation of alkylsiloxane self-assembled monolayers on Si3N4

A direct pathway for sticking/desorption of H$_2$ on Si(100)

Dynamical, Vibrational, Electronic and Optical Properties in c-Si:H with Bond-Centered-Hydrogen, H Dimers and Other H Complexes