Abstract:Hybrid density functional calculations have been carried out using cluster models of the H/Si(100)-2 x 1 surface to investigate the mechanistic details of the initial surface reactions occurring in the atomic layer deposition of hafnium and zirconium oxides (HfO2 and ZrO2). Reaction pathways involving the metal precursors ZrCl4, Zr(CH3)4, HfCl4, and Hf(CH3)4 have been examined. Pathways leading to the formation of a Zr-Si or Hf-Si linkage show a significant sensitivity to the identity of the leaving group, with chloride loss reactions being both kinetically and thermodynamically less favorable than reactions leading to the loss of a methyl group. The energetics of the Zr(CH3)4 and Hf(CH3)4 reactions are similar with an overall exothermicity of 0.3-0.4 eV and a classical barrier height of 1.1-1.2 eV. For the reaction between H2O and the H/Si(100)-2 x 1 surface, the activation energy and overall reaction enthalpy are 1.6 and -0.8 eV, respectively. Due to contamination, trace amounts of H2O may be encountered by metal precursors, leading to the formation of minor species that can lead to unanticipated side-reaction pathways. Such gas-phase reactions between the halogenated and alkylated metal precursors and H2O are exothermic with small or no reaction barriers, allowing for the possibility of metal precursor hydroxylation before the H/Si surface is encountered. Of the contaminant surface reaction pathways, the most kinetically favorable corresponds to the surface -OH deposition. Interestingly, for the hydroxylated metal precursors, a unique reaction pathway resulting in the direct formation of Si-O-Zr and Si-O-Hf linkages has been identified and found to be the most thermodynamically stable pathway available, being exothermic by approximately 1.0 eV.

Quantum Chemical Study of Adsorption and Dissociation of HfCl4 and H2O on Ge/Si(100) − (2×1): Initial Stage of Atomic Layer Deposition of HfO2 on SiGe Surface

Surface Reaction Mechanism of Atomic Layer Deposition of Hfo2 on Ge(100)-2 X 1: A Density Functional Theory Study

Quantum Chemical Study of the Initial Surface Reactions of HfO2 Atomic Layer Deposition on the Hydroxylated GaAs(001)-4×2 Surface

Reaction mechanism of ZrCl4 with Ge/Si(100)-(2 × 1): A density functional theory study of initial stage of ZrO2 atomic layer deposition on SiGe alloy surface

Reaction Mechanism of ZrCl/sub 4/ with Ge/Si[100]-(2 X 1): a Density Functional Theory Study of Initial Stage of ZrO/sub 2/ Atomic Layer Deiposition on SiGe Alloy Surface

Density Functional Theory Study of Initial Stage of ZrO2 Atomic Layer Deposition on Ge/Si(100)-(2×1) Surface

Atomic Layer Deposition of Al2O3 on H-Passivated GeSi： Initial Surface Reaction Pathways with H/GeSi（100）-2 × 1

Initial Surface Reactions in Atomic Layer Deposition of Hfsixoy and Hfo2: A Comparative Study by Density Functional Theory

Kinetics of Molecular Hydrogen Dissociative Adsorption on Si(111) Studied by Sum-Frequency Vibrational Spectroscopy and Second Harmonic Generation

Atomic Layer Deposition of Hafnium Oxide from Tetrakis(ethylmethylamino)hafnium and Water Precursors

Adsorption Characteristics of Ge on 4H-Sic(0001) Surface: First-principles Study

Atomic Layer Deposition of Hafnium Oxide from Hafnium Chloride and Water

Hydrogen adsorption on Ga 2O 3 surface: A combined experimental and computational study

Hafnium oxide and zirconium oxide atomic layer deposition: initial precursor and potential side-reaction product pathways with H/Si(100)-2 x 1

Hydrogen chemisorption on Co(0001) surface: A DFT study

A direct pathway for sticking/desorption of H$_2$ on Si(100)

First-principles Study of Adsorption and Diffusion on Ge/Si(001)-(2×8) and Ge/Si(105)-(1×2) Surfaces

Density-functional theory molecular dynamics simulations of a-HfO2/a-SiO2/SiGe and a-HfO2/a-SiO2/Ge with a-SiO2 and a-SiO suboxide interfacial layers

Initial Processes of Hydrogen Chemisorption on Si(111) Surface

Multiple Pathways for Dissociative Adsorption of SiCl4 on the Si(100)-c(4×2) Surface.

Adsorption of O Adatoms on Hydrogenated Si Cluster