Abstract:Polysilicon serves as a primary raw material in the production of solar cells and semiconductors. However, its impurity content, particularly boron, poses significant challenges during the chemical vapor deposition (CVD) process. Therefore, it is essential to investigate the behavior of boron impurities during CVD. In this study, we conducted first-principles calculations to explore the adsorption behavior and deposition mechanism of boron-containing gases (BCl3, BHCl2, B2H6) on the Si(100) surface. We considered different adsorption sites and performed a systematic analysis of various adsorption systems' adsorption energy, charge transfer, and electronic properties. Our findings indicate that BCl3, BHCl2, and B2H6 molecules undergo dissociative chemisorption at specific adsorption sites. Moreover, charge transfer analysis confirms that each of these adsorbed molecules functions as an electron acceptor. Subsequent analyses, including total charge density (TCD), charge density difference (CDD), total density of states (TDOS), and projected density of states (PDOS), collectively underscore the robust electronic interactions between the gaseous molecules and the Si(100) surface. Through the computation of transition states and energy barriers across three potential reaction pathways, we identify a predominant sequence: BCl3 -> BCl2+Cl -> BCl+Cl -> B+Cl, that governs boron impurity formation on the Si(100) surface during CVD. Our work elucidates the underlying microscopic mechanisms of boron-containing gas adsorption and deposition in the CVD context.

Adsorption Behaviors of Chlorosilanes, HCl, and H 2 on the Si(100) Surface: A First-Principles Study

A First-Principles Investigation into the Adsorption Behavior and Deposition Mechanism of Boron-Containing Gases on Si(100) Surfaces During Chemical Vapor Deposition

First-Principles Study on the Surface Chemistry of 1.4 Nm Silicon Nanocrystals: Case of Hydrosilylation

Multiple Pathways for Dissociative Adsorption of SiCl4 on the Si(100)-c(4×2) Surface.

Surface modification of chlorine-passivated silicon nanocrystals.

Exploration of photocatalytic chlorination combined simplified distillation to produce electronic grade high-purity trichlorosilane via microchannel reactor experiments, multiphase-flow simulation, ReaxFF MD, and DFT

First-Principle Study of Phosphine Adsorption on Si(001)-2$\times$1-Cl

Theoretical study of chlorine for silicon nanocrystals

Interaction of tetraethoxysilane with OH-terminated SiO 2 (0 0 1) surface: A first principles study

Interaction Of Tetraethoxysilane With Oh-Terminated Sio2 (001) Surface: A First Principles Study

Theoretical Investigation of the Ammonia Adsorption Process on Si(100)-2×1 Surface

Adsorption Of Ammonia On Si(100), (111) Surfaces - A Theoretical Approach

INTERACTION BETWEEN Li ATOMS ON Si(100)2×1 AND PHASE CHANGE OF SURFACE STRUCTURE

Reaction Mechanism of ZrCl/sub 4/ with Ge/Si[100]-(2 X 1): a Density Functional Theory Study of Initial Stage of ZrO/sub 2/ Atomic Layer Deiposition on SiGe Alloy Surface

Reaction mechanism of ZrCl4 with Ge/Si(100)-(2 × 1): A density functional theory study of initial stage of ZrO2 atomic layer deposition on SiGe alloy surface

Quantum Chemical Study of Adsorption and Dissociation of HfCl4 and H2O on Ge/Si(100) − (2×1): Initial Stage of Atomic Layer Deposition of HfO2 on SiGe Surface

Chemisorption Of Acetonitrile, Pyridine And Pyrazine On The Si(100)-2x1 Surface: Theoretical Predictions

Theoretical Investigations for Kinetics of the Chemical Reactions: H + SiClx (x = 1, 2, 3).

Computational Insights into the Energetics of Single C2-C10 Aliphatic Moieties Adsorbed on Hydrogenated Silicon (111) Surface

PBr3 adsorption on a chlorinated Si(100) surface with mono- and bivacancies