Abstract:Hybrid density functional calculations have been carried out using cluster models of the H/Si(100)-2 x 1 surface to investigate the mechanistic details of the initial surface reactions occurring in the atomic layer deposition of hafnium and zirconium oxides (HfO2 and ZrO2). Reaction pathways involving the metal precursors ZrCl4, Zr(CH3)4, HfCl4, and Hf(CH3)4 have been examined. Pathways leading to the formation of a Zr-Si or Hf-Si linkage show a significant sensitivity to the identity of the leaving group, with chloride loss reactions being both kinetically and thermodynamically less favorable than reactions leading to the loss of a methyl group. The energetics of the Zr(CH3)4 and Hf(CH3)4 reactions are similar with an overall exothermicity of 0.3-0.4 eV and a classical barrier height of 1.1-1.2 eV. For the reaction between H2O and the H/Si(100)-2 x 1 surface, the activation energy and overall reaction enthalpy are 1.6 and -0.8 eV, respectively. Due to contamination, trace amounts of H2O may be encountered by metal precursors, leading to the formation of minor species that can lead to unanticipated side-reaction pathways. Such gas-phase reactions between the halogenated and alkylated metal precursors and H2O are exothermic with small or no reaction barriers, allowing for the possibility of metal precursor hydroxylation before the H/Si surface is encountered. Of the contaminant surface reaction pathways, the most kinetically favorable corresponds to the surface -OH deposition. Interestingly, for the hydroxylated metal precursors, a unique reaction pathway resulting in the direct formation of Si-O-Zr and Si-O-Hf linkages has been identified and found to be the most thermodynamically stable pathway available, being exothermic by approximately 1.0 eV.

Reaction Mechanism of ZrCl/sub 4/ with Ge/Si[100]-(2 X 1): a Density Functional Theory Study of Initial Stage of ZrO/sub 2/ Atomic Layer Deiposition on SiGe Alloy Surface

Reaction mechanism of ZrCl4 with Ge/Si(100)-(2 × 1): A density functional theory study of initial stage of ZrO2 atomic layer deposition on SiGe alloy surface

Density Functional Theory Study of Initial Stage of ZrO2 Atomic Layer Deposition on Ge/Si(100)-(2×1) Surface

Density Functional Theory Study on Surface Reaction Mechanism of Atomic Layer Deposition of ZrO(2)on Si(100)-2 X 1

Quantum Chemical Study of Adsorption and Dissociation of HfCl4 and H2O on Ge/Si(100) − (2×1): Initial Stage of Atomic Layer Deposition of HfO2 on SiGe Surface

Surface Reaction Mechanism of Atomic Layer Deposition of Hfo2 on Ge(100)-2 X 1: A Density Functional Theory Study

Atomic Layer Deposition of Al2O3 on H-Passivated GeSi： Initial Surface Reaction Pathways with H/GeSi（100）-2 × 1

Theoretical investigations on CH2=CH-CH2OH on the Si(100)-2 x 1 and Ge(100)-2 x 1 surfaces

Theoretical investigations on CH2CH–CH2OH on the Si(100)-2×1 and Ge(100)-2×1 surfaces

Hafnium oxide and zirconium oxide atomic layer deposition: initial precursor and potential side-reaction product pathways with H/Si(100)-2 x 1

Complexity of H-bonding Between Polar Molecules on Si(100)-2 × 1 and Ge(100)-2 × 1 Surfaces

First Principles Investigation of C, Cl2 and CO Co-Adsorption on ZrSiO4 Surfaces for Carbochlorination Reaction

First-principles Study of H2 Adsorption and Dissociation on Zr(0001)

Density Functional Theory Study on the Surface Reaction Mechanism of Atomic Layer Deposited Ta2o5 on Si(100) Surfaces

INTERACTION BETWEEN Li ATOMS ON Si(100)2×1 AND PHASE CHANGE OF SURFACE STRUCTURE

Adsorption Characteristics of Ge on 4H-Sic(0001) Surface: First-principles Study

Chemisorption of tetrakis(dimethylamino)zirconium on zirconium oxide: Density functional theory study

Crystalline SrZrO3 Deposition on Ge (001) by Atomic Layer Deposition for High-K Dielectric Applications

Theoretical study on the initial reaction mechanisms of ansa-metallocene zirconium precursor on hydroxylated Si(100) surface

Adsorption, Diffusion, And Site Exchange For Ge Ad-Dimers On Sb-Covered Si(001) From First-Principles Total-Energy Calculations

Multiple Pathways for Dissociative Adsorption of SiCl4 on the Si(100)-c(4×2) Surface.