Abstract:The chemical principal and mechanisms that enable selective atomic layer depositions are gaining rapid growing interests, which have unlocked attractive avenues for the development of novel nanostructures by depositing atoms at desired surface locations. It has found versatile applications in emerging fields beyond semiconductor industry. Yet with the continuing downscaling, it is important to expand approaches for selective ALD with atomic scale precision on nanoscale features. The self-driven selective growth is needed, modifying specific surface down to atoms, to enable unprecedented capability of tuning the structure-property relationship for emerging applications. In this talk, the inherently selective atomic layer deposition processes will be discussed. Previously, we have demonstrated facet-selective ALD processes, which based on intrinsic differences of precursors chemisorption on terraces or step edges of nanoparticles. To expand the inherently ASD, the acidity and alkaline, surface electronegativity, lattice strains could be exploited to achieve this inhibitor-free selective deposition process. Tantalum oxide was studied on a series of oxide substrates. Although the oxides have -OH groups on the surface and proposed to have similar nucleation sites, there are long nucleation delays on basic oxides. The H-transfer reaction is a key factor to influence the reaction barrier. It is hard to nucleate on basic substrates because the H-transfer reaction is blocked. Another demonstration is the redox-coupled inherently selective ALD for self-alignment of tantalum oxide on SiO 2 /Cu nanopatterns. By adding an in-situ ethanol reduction pulse before each traditional binary ALD cycle, and the ‘reduction-adsorption-oxidation’ ALD process increases the selectivity. Self-aligned manufacturing on nanoscale Cu/SiO 2 patterns without excessive mushroom growth at the edge and undesired nucleation defects on the Cu region. The process can be reliably repeated to yield more than 5 nm-thick Ta 2 O 5 on the SiO 2 region, while no undesired deposition occurs on Cu patterns. In addition, an anisotropic growth model with the dynamical competition of expansion and dissociation of the nucleus is proposed to nucleation delay are quantitively predicted and the model provides a practical method to evaluate the selectivity of ALD theoretically. It provides a new strategy for inherently selective ALD, which will expand the selective toolbox of nanofabrication for next-generation nanoelectronic applications.

Density Functional Theory Study on the Surface Reaction Mechanism of Atomic Layer Deposited Ta2o5 on Si(100) Surfaces

Density Functional Theory Study on Surface Reaction Mechanism of Atomic Layer Deposition of ZrO(2)on Si(100)-2 X 1

Initial Surface Reactions Mechanisms Of Atomic Layer Deposition Tio2 On H/Si(100)-2x1 Surface

Initial Surface Reactions Mechanisms of Atomic Layer Deposition Tio2 Using Ti(Och3)(4) and H2o As Precursors

Initial Surface Reactions Mechanisms of Atomic Layer Deposition TiO<sub>2</sub><sub> </sub>Using Ti(OCH<sub>3</sub>)<sub>4</sub> and H<sub>2</sub>O as Precursors

Initial Surface Reactions in Atomic Layer Deposition of Hfsixoy and Hfo2: A Comparative Study by Density Functional Theory

Quantum Chemical Study of the Initial Surface Reactions in Atomic Layer Deposition of TiN on the SiO(2) Surface.

Initial Surface Reactions in Atomic Layer Deposition of Al2O3on the Hydroxylated GaAs(001)-4 × 2 Surface

Reaction of tetrabutyl titanate in the adsorption layer on Si02 surface

Surface Reaction Kinetics for Inherent Selective Atomic Layer Deposition of Tantalum Oxide

Density Functional Theory Study of Initial Stage of ZrO2 Atomic Layer Deposition on Ge/Si(100)-(2×1) Surface

A theoretical study on the surface reaction of tetrakis(dimethylamino)titanium on titanium oxide

Surface Reaction Mechanism of Atomic Layer Deposition of Hfo2 on Ge(100)-2 X 1: A Density Functional Theory Study

H2O-based Atomic Layer Deposition Mechanism of Aluminum Oxide Using Trimethylaluminum

H 2 O-based atomic layer deposition mechanism of aluminum oxide using trimethylaluminum

Atomic Layer Deposition of Hafnium Oxide from Tetrakis(ethylmethylamino)hafnium and Water Precursors

Quantum Chemical Study of the Initial Surface Reactions of HfO2 Atomic Layer Deposition on the Hydroxylated GaAs(001)-4×2 Surface

Effects of NH3 Plasma Pretreatment on Initial Reactions of Atomic Layer Deposition TaN Barrier Layer on SiOC Dielectric

Initial Growth Mechanisms of ZrO2 and TiO2 Thin Films Using Cycloheptatrienyl–cyclopentadienyl Heteroleptic Precursors: A Comparative Study by Density Functional Theory

Reaction mechanism of atomic layer deposition of aluminum sulfide using trimethylaluminum and hydrogen sulfide

Theoretical study on tin oxide surface chemistry mechanism and thermodynamic properties for atomic layer deposition equipment optimization