Fabrication and Characterization of ALD-grown ZrO 2 : Ge Thin Films on Si ( 1 0 0 ) using CpZr ( NMe 2 ) 3 and ( NMe 2 ) 2 Ge ( ipr 2 en ) Precursors with Ozone
Jun-Gill Kang,K. Leung,Jung-Soo Kang,Jae-Sun Jung,Jin-ho Shin,Dae-Hyun Kim,J. P. Thomas
Abstract:The continuous scaling of complementary metal-oxide semiconductor (CMOS) device dimensions to a few nanometers thick has led to the use of high-dielectric materials. The traditional SiO2 layer in the application to the nanosized configurations faces a problem, such as the leak currents from electron tunneling through the dielectrics due to its low dielectric constant with k = 3.9. ZrO2 is a particularly attractive material because of its large dielectric constant (k > 20), wide band gap (5.8–7.8 eV), and high thermal stability with Si. ZrO2 has already been used in dynamic random access memory (DRAM); however, incorporation of ZrO2 into next-generationDRAMdevices remains a challenge. Zirconia exists in three polymorphs: monoclinic, tetragonal, and cubic, as well as the amorphous state. The dielectric constants of the monoclinic, tetragonal, and cubic phases are 20, 47, and 37, respectively. The monoclinic phase is the most stable, however, and is in equilibrium at room temperature, whereas the tetragonal and cubic phases can be stabilized at temperatures greater than 1400 and 2570 K, respectively. For ultrathin films, however, the amorphous state is stable up to 750 C. Recently, doping ZrO2 with Ge has been shown to increase k, which is attributed to favorable formation of the metastable phase. Atomic layer deposition (ALD) has been shown to be an excellent method for deposition of high-quality ultra-thin films for semiconductor device applications; however, few studies have reported the properties of ALD-grown GeO2, and to date, Ge-doped ZrO2 thin films have been formed using molecular beam epitaxy at high temperatures. Germanium ALD growth precursors include 1,2-bis[(2,6-diisopropylphenyl)imino] acenaphthene germanium(II), germanium(IV) ethoxide, and tetrakis(dimethylamino) germanium(IV), which are expensive and limited in supply. We have previously reported an ALD growth process for ZrO2 and GeO2 ultra-thin films using cyclopentadienyl-type Zr(IV) and ethylenediamine-type Ge(IV) precursors, respectively. Bis(dimethylamino)(N,N0di-isopropyl-ethylenediamine) germanium [(NMe2)2Ge (pr2en)] with ozone exhibits a distinct temperatureindependent plateau in its growth rate, remaining at 0.40 Å/ cycle in the range 200–320 C. Here we describe an ALD growth process for Ge(IV)-doped ZrO2 ultra-thin films using CpZr(NMe2)3 and (NMe2)2Ge( pr2en) with ozone. We investigated the relationships between film thickness, stoichiometry of the precursor mixture, and chemical composition, with the aim of controlling Ge doping and achieving highquality ZrO2:Ge thin films on Si(1 0 0). Three types of ZrO2:Ge/ZrO2multilayer were fabricated on Si(1 0 0) substrates by controlling precursor ratios. Both ALD conditions and the method of injection of the different precursors significantly affected the quality of the resulting films. Table 1 lists the Ge-doped ZrO2 ALD growth conditions with the CpZr(NMe2)3 and [(NMe2)2Ge ( pr2en)] precursors. Two basic subcycles were designed for separately feeding pure Zr precursor (A) and a mixture of Zr and Ge precursors (B), as shown in Figure 1. Each subcycle corresponded to a pulse sequence, as listed in Table 1; hereafter, pulses for feeding A and B are referred to as cycles A and B, respectively. First, we fabricated the multilayered thin films on Si wafers via a sequence of five consecutive A-cycles, followed by one Bcycle (creating film F1), and the total number of cycles was 198. Two further sets of multilayered thin films were fabricated using the following sequences: three consecutive Acycles followed by one B-cycle (F2) and one A-cycle, followed by one B-cycle (F3); for all of these, the total number of cycles was 200. The molar ratios of Ge to Zr were 0.09, 0.14, and 0.33 for the F1, F2, and F3 films, respectively. The thickness of each filmwas determined using ellipsometry (MG-1000; Nano-View, Seoul, Korea). The film F1 was 213.8 Å thick, and the growth rate was 1.08 Å/cycle. The observed growth rate of the Ge-doped thin films was equal to that of un-doped ZrO2 thin films grown under identical ALD conditions. As the fraction of B-cycles increased, the thickness of the films decreased (the total number of cycles remained approximately constant at ~200). The F2 film was 208 Å thick and grew at a rate of 1.04 Å/cycle, and the F3 film was 187 Å thick with a growth rate of 0.935 Å/cycle. Given Note DOI: 10.1002/bkcs.10406 J.-S. Jung et al. BULLETIN OF THE KOREAN CHEMICAL SOCIETY
Engineering,Materials Science,Physics