Abstract:A simple procedure has been developed for the processing of silicon wafers in order to facilitate the spatially resolved growth of thin solid films on their surfaces. Specifically, a combination of silylation and UV/ozonolysis was tested as a way to control the concentration of the surface hydroxo groups required for subsequent atomic layer deposition (ALD) of metals or oxides. Water contact angle measurements were used to evaluate the hydrophilicity/hydrophobicity of the surface, a proxy for OH surface coverage, and to optimize the UV/ozonolysis treatment. Silylation with hexamethyldisilazane, trichloro(octadecyl)silane, or trimethylchlorosilane was found to be an efficient way to block the hydroxo sites and to passivate the underlying surface, and UV/O3 treatments were shown to effectively remove the silylation layer and to regain the surface reactivity. Both O3 and 185 nm UV radiation were determined necessary for the removal of the silylation layer, and additional 254 nm radiation was found to enhance the process. Attenuated total reflection-infrared absorption spectroscopy was employed to assess the success of the silylation and UV/O3 removal steps, and atomic force microscopy data provided evidence for the retention of the original smoothness of the surface. Selective growth of HfO2 films via TDMAHf + H2O ALD was seen only on the UV/O3 treated surfaces; total inhibition of the deposition was observed on the untreated silylated surfaces (as determined by x-ray photoelectron spectroscopy and ellipsometry). Residual film growth was still detected on the latter if the ALD was carried out at high temperatures (250 °C), because the silylation layer deteriorates under such harsh conditions and forms surface defects that act as nucleation sites for the growth of oxide grains (as identified by electron microscopy and scanning electron microscopy). We believe that the silylation-UV/O3 procedure advanced here could be easily implemented for the patterning of surfaces in many microelectronic applications.

Formation of alkylsiloxane self-assembled monolayers on Si3N4

Self-assembled Monolayers of Perfluoroalkylsilane on Plasma-Hydroxylated Silicon Substrates

Structural Characterization of Alkylsilane and Fluoroalkylsilane Self-Assembled Monolayers on SiO2 by Molecular Dynamics Simulations

Self-assembling of Cyano- and Carboxyl-Terminated Monolayers Using Short-Chain Alkylsiloxane

Self-assembled monolayers preparation of HfO_2 thin film

Ultralow adhesion and friction of fluoro-hydro alkyne-derived self-assembled monolayers on H-terminated Si(111).

Preparation and Tribological Behaviors of an Amide-Containing Stratified Self-Assembled Monolayers on Silicon Surface

Self-Assembled Monolayers Preparation And Characterization Of Hfo2 Film

Self-assembled Monolayers Preparation of HfO2 Thin Film

Room-temperature Atmospheric Oxidation of Si Nanocrystals after HF Etching

Self-assembled Perfluoroalkylsilane Films on Silicon Substrates for Hydrophobic Coatings

Preparation Of Hfo(2) Thin Film Through Self-Assembled Monolayers On Si Substrate

XPS and AFM Characterization of the Self‐assembled Molecular Monolayers of a 3‐aminopropyltrimethoxysilane on Silicon Surface, and Effects of Substrate Pretreatment by UV‐irradiation

Spatial resolution in thin film deposition on silicon surfaces by combining silylation and UV/ozonolysis

Building Organic Monolayers Based on Fluorinated Amines on the Si(111) Surface

Self-assembled Monolayers of Oligosilane on the Silicon (001) Surface: Molecular Dynamics Simulations.

Fluorinated Alkyne-Derived Monolayers on Oxide-Free Silicon Nanowires Via One-Step Hydrosilylation

Synthesis of Fluoroalkylsilane-Coupling Agents and Their Self-Assembled Monolayers

Growth of Self-Assembled N-Alkyltrichlorosilane Films on Si(100) Investigated by Atomic Force Microscopy

Differentiation of field-induced and native oxide using selective formation of self-assembled monolayer

Studies on Self-Assembly of Methoxy Polyethylene Oxide Propyl Trimethoxysilane on Silicon Substrate