Abstract:The method established previously for studying the etching rates of micro-scale silicon and silica was used to study the etching process of silicon and silica on the Si(100) surface. Photolithography was used to pattern a positive photoresist mask to confine the etching area, and the atomic force microscopy was used to probe the etched surface. The lateral etching rate of silicon or silica on the silicon surface was defined, and the lateral and longitudinal etching rates of silicon and silica on the Si(100) surface in 40% ammonium fluoride aqueous solution were measured. The effect of the dissolved oxygen on the etching rates was studied by bubbling the solution with high purity nitrogen. The lateral and longitudinal etching rates of silicon and silica on the (100) surface increase with temperatures except for the lateral etching rate of silica in a N-2-bubbled solution which probably reaches the limit of diffusion controlled reaction. The etching rates of silicon and thermal silica on the Si(100) surface show remarkable difference with that on the Si (111) surface in both air-saturated and N-2-bubbled solutions. The apparent activation energies for the silicon and silica etching processing in ammonium fluoride solution were obtained from the etching rates at different temperatures in the range 20.6 similar to 34.1degreesC. The similarity of the apparent activation energies for the etching processing of silicon and silica on the (100) surface to that on the (111) surface probably suggests that the rate-determined-step is the same in both cases. A lot of gas bubbles are seen to aggregate on the surface in silicon dissolution process at 38.2degreesC, and it is found that the gas bubbles have great influence on the silicon etching rate. The formation of bubbles accelerates the silicon dissolution at the beginning but blocks the etching as the bubbles gradually aggregate on the surface.

Direct Measurement of the Etching Rates on Si(111) and Silicon Dioxide Surfaces in 40% Ammonium Fluoride Aqueous Solution Via Atomic Force Microscopy

The Lateral and Longitudinal Etching Rates of Silicon and Silica on Si(100) Surface

Properties of amorphous SiO2 films prepared by reactive RF magnetron sputtering method

Running droplet of interfacial chemical reaction flow

Micromechanical Measurement of Active Sites on Silicon Nitride Using Surface Free Energy Variation

Molecular Dynamics Study of Interaction between Fluorine Atoms and Silicon Surface

Etching Mechanisms of CF3Etching Fluorinated Si: Molecular Dynamics Simulation

Room-temperature Atmospheric Oxidation of Si Nanocrystals after HF Etching

Orientation dependent etching of silicon by fluorine molecules: a quantum chemistry computational study

The Role of Sulfite in the Wetting Etching of Silicon and Silica

Molecular Dynamics Simulations of Influence of Surface Temperature on Fluorine Etching of Silicon

Etching Silicon with Fluorine-Gas

Reaction of water with hydrofluoric acid treated silicon(111) and (100) surfaces

Direct Si oxidation with fluorine incorporation using an argon excimer VUV source

Reactive ion etching of SiC thin films using fluorinated gases

Studies of atomic and molecular fluorine reactions on silicon surfaces

Fluorine‐containing species on the hydrofluoric acid etched silicon single‐crystal surface

Etching mechanism of amorphous hydrogenated silicon nitride by hydrogen fluoride

Study on Mechanism of Al-enhanced Etching of Silicon by Reactive Ions in SF_6/O_2 Environment

Dry Etching of Silicon Materials in SF 6 Based Plasmas: Roles of and Gas Additives

Atomic layer etching of SiO$_2$ using sequential exposures of Al(CH$_3$)$_3$ and H$_2$/SF$_6$ plasma