Abstract:The method established previously for studying the etching rates of micro-scale silicon and silica was used to study the etching process of silicon and silica on the Si(100) surface. Photolithography was used to pattern a positive photoresist mask to confine the etching area, and the atomic force microscopy was used to probe the etched surface. The lateral etching rate of silicon or silica on the silicon surface was defined, and the lateral and longitudinal etching rates of silicon and silica on the Si(100) surface in 40% ammonium fluoride aqueous solution were measured. The effect of the dissolved oxygen on the etching rates was studied by bubbling the solution with high purity nitrogen. The lateral and longitudinal etching rates of silicon and silica on the (100) surface increase with temperatures except for the lateral etching rate of silica in a N-2-bubbled solution which probably reaches the limit of diffusion controlled reaction. The etching rates of silicon and thermal silica on the Si(100) surface show remarkable difference with that on the Si (111) surface in both air-saturated and N-2-bubbled solutions. The apparent activation energies for the silicon and silica etching processing in ammonium fluoride solution were obtained from the etching rates at different temperatures in the range 20.6 similar to 34.1degreesC. The similarity of the apparent activation energies for the etching processing of silicon and silica on the (100) surface to that on the (111) surface probably suggests that the rate-determined-step is the same in both cases. A lot of gas bubbles are seen to aggregate on the surface in silicon dissolution process at 38.2degreesC, and it is found that the gas bubbles have great influence on the silicon etching rate. The formation of bubbles accelerates the silicon dissolution at the beginning but blocks the etching as the bubbles gradually aggregate on the surface.

Molecular Dynamics Simulations of Influence of Surface Temperature on Fluorine Etching of Silicon

Molecular Dynamics Study of Interaction between Fluorine Atoms and Silicon Surface

Running droplet of interfacial chemical reaction flow

Etching Mechanisms of CF3Etching Fluorinated Si: Molecular Dynamics Simulation

Molecular Dynamics Simulation of Lag Effect in Fluorine Plasma Etching Si

Orientation dependent etching of silicon by fluorine molecules: a quantum chemistry computational study

MD Simulation and Transport Property Analysis of Silicon in High-Temperature Molten Fluoride Salts Electrolyte

Surface Orientation and Temperature Effects on the Interaction of Silicon with Water: Molecular Dynamics Simulations Using ReaxFF Reactive Force Field.

The Lateral and Longitudinal Etching Rates of Silicon and Silica on Si(100) Surface

Etching Silicon with Fluorine-Gas

Studies of atomic and molecular fluorine reactions on silicon surfaces

Modeling of fluorine-based high-density plasma etching of anisotropic silicon trenches with oxygen sidewall passivation

Molecular Dynamics Simulation of Silicon Dioxide Etching by Hydrogen Fluoride Using the Reactive Force Field

Fluorine‐containing species on the hydrofluoric acid etched silicon single‐crystal surface

Direct Measurement of the Etching Rates on Si(111) and Silicon Dioxide Surfaces in 40% Ammonium Fluoride Aqueous Solution Via Atomic Force Microscopy

Fluorine-Passivated Silicon Nanocrystals: Surface Chemistry Versus Quantum Confinement

Comparison study of the femtosecond laser-induced surface structures on silicon at an elevated temperature.

Etching of Si at low temperatures using a SF6 reactive ion beam: Effect of the ion energy and current density

Molecular dynamics simulation study on ablation of silicon by water-jet-guided laser

Molecular dynamics simulations of silicon nitride atomic layer etching with Ar, Kr, and Xe ion irradiations

Molecular beam studies of a gas-surface reaction: dynamics of laser-induced chemical etching of silicon (111) by chlorine