Abstract:In this work, we investigate the silicon nitridation process using a N 2 plasma Glow Discharge Source (GDS) in an ultra-high vacuum chamber. In situ Angle Resolved X-ray Photoelectron Spectroscopy (ARXPS) measurements were performed to determine various chemical environments of the surface species. The main goals of this study are determination of the film chemical composition, to estimate its thickness and identify various phenomena taking place during the nitridation process under different experimental conditions. To achieve these objectives, we developed an ARXPS intensity model for an ultrathin SiN x overlayer. Based on the ARXPS results, which indicate that the silicon nitride film is not homogenous, we adopted a bi-layer model composed of two Si x N y O z layers with varying thickness and chemical composition. The model is built from analysis of photoelectron intensities, considering a comparison between experimental and theoretical data. This bi-layer model revealed that the silicon nitride layer consists of a surface layer composed of approximately equal amounts of silicon and nitrogen (50% each), and an interfacial layer containing varying amounts of oxygen depending on experimental parameters. The presence of oxygen is due to residual air contamination in the vacuum chamber and/or to Si native oxide. The estimated thickness of silicon nitride film is less than 9 nm, depending on the nitridation time and temperature. The model developed in this work enabled us to study the effects of initial surface state (as received or chemically cleaned), Si substrate crystallographic orientation (such as (100) and (111)), and the nitridation temperature (room temperature and 500°C). The diffusing species (N + , N 2 + , O + ), which play a crucial role during nitridation, were found to be influenced by temperature, treatment time, and substrate orientation. The diffusion phenomenon competed with other processes such as NO desorption, leading to a significant impact on formation of the SiN x film. Furthermore, we compared the thickness obtained from the ARXPS model using cross-sectional High-Resolution Transmission Electron Microscopy (HR-TEM) images. Additional Low-Energy Electron Diffraction (LEED) measurements indicated that the SiN x film was amorphous.

Molecular dynamics simulations of silicon nitride atomic layer etching with Ar, Kr, and Xe ion irradiations

Etch-stop mechanisms in plasma-enhanced atomic layer etching of silicon nitride: A molecular dynamics study

Mechanism of SiN etching rate fluctuation in atomic layer etching

Role of physisorption in atomic layer etching of silicon nitride

Molecular dynamics simulation of Si trench etching with SiO2 hard masks

Quasi‐atomic layer etching of silicon with surface chlorination and removal using Ar or He plasmas

Reaction Mechanism and Selectivity Control of Si Compound ALE Based on Plasma Modification and F-Radical Exposure

Isotropic plasma-thermal atomic layer etching of aluminum nitride using SF$_6$ plasma and Al(CH$_3$)$_3$

In-Flight Dry Etching of Plasma-Synthesized Silicon Nanocrystals

Modeling of fluorine-based high-density plasma etching of anisotropic silicon trenches with oxygen sidewall passivation

Sub-damage-threshold plasma etching and profile tailoring of Si through laser-stimulated thermal desorption

Atomic layer etching of SiO$_2$ using sequential exposures of Al(CH$_3$)$_3$ and H$_2$/SF$_6$ plasma

Reactive ion etching of plasma enhanced chemical vapor deposition amorphous silicon and silicon nitride: Feeding gas effects

High-rate etching of silicon oxide and nitride using narrow-gap high-pressure (3.3 kPa) hydrogen plasma

Angle-Resolved X-ray Photoelectron Spectroscopy intensity modeling of SiN x ultrathin layer grown on Si (100) and Si (111) substrates by N 2 plasma treatment

ReaxFF molecular dynamics simulation of single-crystalline silicon plasma polishing and subsurface damage removal

Investigation of mechanism and surface morphology on the femtosecond laser ablation of silicon nitride under different auxiliary processing environments

Molecular Dynamics Simulations of Influence of Surface Temperature on Fluorine Etching of Silicon

Surface quality and microstructure evolution in fused silica under SF 6 /Ar reactive ion beam etching

Role of a 193 nm ArF Excimer Laser in Laser-Assisted Plasma-Enhanced Chemical Vapor Deposition of SiN x for Low Temperature Thin Film Encapsulation

Molecular beam studies of a gas-surface reaction: dynamics of laser-induced chemical etching of silicon (111) by chlorine