Abstract:Continued downscaling of semiconductor devices has placed stringent constraints on all aspects of the fabrication process including plasma-assisted anisotropic etching. To address manufacturing challenges associated with atomic-scale control, material selectivity, etch fidelity, and increasingly complex device architectures, reactive ion etching (RIE) is transitioning to plasma-assisted atomic layer etching (ALE). Even though the number of elements used in the semiconductor devices has increased several-fold over the last four decades, SiO2 and SiNx remain the most commonly used dielectric materials. In fact, fluorocarbon based, plasma-assisted ALE processes for SiO2 and SiNx have already been integrated into semiconductor manufacturing, including etching of self-aligned contacts for advanced transistors. However, several challenges remain in achieving ultrahigh etch selectivity of SiO2 over SiNx and vice versa. In this article, first, the authors provide a focused review on selective RIE of SiO2 over SiNx and contrast this with ALE. A particular focus is given to the etching mechanism, including the role of the mixing layer composition and thickness at the fluorocarbon-SiO2 interface, the F-to-C ratio in the fluorocarbon parent gas, H2 dilution, surface composition on the nonetched SiNx, ion flux and energy, Ar plasma activation duration in ALE, and chamber memory effects. Second, we discuss the reverse case of selectively etching SiNx over SiO2 with careful attention given to the role of novel hydrofluorocarbon gases and dilution of the primary feed gas with other gases such as CH4 and NO. In the second part of this review, we also discuss how novel surface chemistries are enabled by the introduction of ALE, which include selective (NH4)2SiF6 formation on the SiNx surface and selective surface prefunctionalization of SiO2 to enable ultrahigh selectivity. Through this review, the authors hope to provide the readers with an exhaustive knowledge of the selectivity mechanisms for RIE of SiO2 over SiNx and vice versa, which provides a basis for developing future highly material-selective ALE processes.

Quasi‐atomic layer etching of silicon with surface chlorination and removal using Ar or He plasmas

Molecular dynamics simulations of silicon nitride atomic layer etching with Ar, Kr, and Xe ion irradiations

Selective atomic layer etching of HfO2 over silicon by precursor and substrate-dependent selective deposition

Atomic layer etching of SiO$_2$ using sequential exposures of Al(CH$_3$)$_3$ and H$_2$/SF$_6$ plasma

Role of physisorption in atomic layer etching of silicon nitride

Reaction Mechanism and Selectivity Control of Si Compound ALE Based on Plasma Modification and F-Radical Exposure

Sub-damage-threshold plasma etching and profile tailoring of Si through laser-stimulated thermal desorption

Etching of high aspect ratio features in Si using SF6∕O2∕HBr and SF6∕O2∕Cl2 plasma

In-plasma photo-assisted etching of Si with chlorine aided by an external vacuum ultraviolet source

ON MECHANISMS OF OXYGEN INFLUENCE ON GAS-PHASE PARAMETERS AND SILICON REACTIVE-ION ETCHING KINETICS IN HBr + Cl2 + O2 PLASMA

Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar

A study on the etching characteristics of atmospheric pressure plasma for single-crystal silicon wafer

Mechanism of SiN etching rate fluctuation in atomic layer etching

Effects of plasma conditions on the shapes of features etched in Cl2 and HBr plasmas. I. Bulk crystalline silicon etching

Isotropic plasma-thermal atomic layer etching of aluminum nitride using SF$_6$ plasma and Al(CH$_3$)$_3$

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Etch selectivity during plasma-assisted etching of SiO2 and SiNx: Transitioning from reactive ion etching to atomic layer etching

Effect of Discharge Gas Composition on SiC Etching in an HFE-347mmy/O2/Ar Plasma

Reactive ion etching of plasma enhanced chemical vapor deposition amorphous silicon and silicon nitride: Feeding gas effects

Low global warming C5F10O isomers for plasma atomic layer etching and reactive ion etching of SiO2 and Si3N4

Ion-Enhanced Etching Characteristics of sp2-Rich Hydrogenated Amorphous Carbons in CF4 Plasmas and O2 Plasmas