Abstract:Thermal atomic layer etching is rapidly becoming an important complementary processing technology in the manufacturing of 5 and 3 nm devices in the semiconductor industry. Critically, architectures such as 3D NAND and 3D DRAM require conformal isotropic etching to remove material such as HfO 2 in hard-to-reach locations with aspect ratios that can be greater than 50:1. To achieve repeatable device performance throughout a 3D stack, the removal rate (etch per cycle) of the etched material during an etch process needs to be controlled such that the overall etch amount is the same from top to bottom of the device stack. In this work, the reaction kinetics of reactants and byproducts during a cyclical ligand exchange-based atomic layer etching (ALE) process have been modelled. This ALE process consists of two steps: a fluorination step followed by a fluorine-to-chlorine ligand exchange-based removal step. Modeling was performed for each of those steps separately. Experimental data revealed that the fluorine dosing during the fluorination step was predominantly responsible for controlling the etch rate of the ALE process but had only a minimal impact on the etch profile inside high aspect ratio holes. The ligand exchange dosing, on the other hand, predominantly controlled the etch profile (depth loading) with equal etch rates from top-to-bottom, obtained when the step was operated close to saturation. The model predicts that the chemical reaction rate of dimethylaluminum chloride (DMAC) on a fluorinated surface during the ligand exchange step is 9.1 s −1 , about 46 times greater than the reaction rate of hydrogen fluoride (HF) on the hafnium oxide surface during the fluorination step (only 0.2 s −1 ). Furthermore, modeling results revealed that the sticking coefficient for DMAC on a hafnium fluoride surface far exceeded that of HF on a hafnium oxide surface in the conditions modelled (0.94 s −1 for DMAC vs 0.0058 s −1 for HF). With these modeling results, the different roles fluorination and ligand exchange steps have regarding the control of etch rate per cycle and profile inside high aspect ratio holes can be explained.

TDC Model for PSG Sacrificial Layer Etching with Hydrofluoric Acid

Modified Model for Sacrificial Layer Etching

A Modified Model for Etching a Sacrificial Layer in Bubble Structures

Sacrificial layer etching in bubble structure

Etching Rate Of Sacriflcial Layer In Nanometer

The Effects of Diffusion Coefficient on the Etching Process of Sacrificial Oxide Layers

Modified Release-Etch Modeling for Complex Sacrificial Layer Structures

Sacrificial Layer Etching Process in Joint Channels

Running droplet of interfacial chemical reaction flow

A Study On Etching Profiles Of Sacrificial Layers

Study of Etching Rate with Sacrificial Layer's Thickness in Nanometer

Effect of Width Ratio on the Etching Behavior of Joint Channel Structure

Effect of annealing on etching profile of sacrificial layer and etching rate

Surface reaction modelling of thermal atomic layer etching on blanket hafnium oxide and its application on high aspect ratio structures

Study of high aspect ratio etching in silicon by a mixture of SF6/O2 using a 2-D model based on a Monte Carlo approach.

Flow-restricted Etching Method on Isotropic Substrates and Its Mechanism

Flux based modeling and simulation of dry etching for fabrication of silicon deep trench structures

Anisotropic Vapor HF etching of silicon dioxide for Si microstructure release

Molecular Dynamics Simulation of Silicon Dioxide Etching by Hydrogen Fluoride Using the Reactive Force Field

Study on HF Vapor-Phase Etching for Suspended Nano Structure Fabrication

A Sacrificial Layer Etching Method Applied in Surface Micromachining Using Agitated BHF and Glycerol Solution