Formation of Anti-Etching Nanopatterns in Field-Emission Scanning Probe Lithography on Calixarene Films

Yangfan Wu,Lihua Xu,Yihang Fan,Zhengjun Zhang,Wei Liu,Peng Li,Xiaohui Qiu
DOI: https://doi.org/10.1021/acs.jpcc.3c02804
2023-01-01
Abstract:Low-energy field-emission scanning probe lithography(FE-SPL) isa benchtop technique that allows fabrication of sub-10 nanometer scalenanostructures in a photoresist transferable to the underlying siliconsubstrate. Understanding the mechanism of the interaction betweenlow-energy electrons and organic molecule films in the FE-SPL processis crucial for advancing the lithographic resolution. In this paper,we investigated the fabricated patterns on ultrathin calixarene filmsby FE-SPL and revealed the formation of a silicon oxide layer at theorganic molecule/silicon interface by means of nano Fourier transforminfrared spectroscopy (nano-FTIR). Our results unraveled that thethin anti-etching layer ensures that the patterns are faithfully transferredinto the silicon substrate in the following cryogenic plasma treatment.The evolution of silicon oxides as a function of exposure doses duringFE-SPL process was systematically studied. The understanding of theunderlying mechanism may assist the further design of molecular photoresistsin FE-SPL and expand its application to advanced functional materials.
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