Sub 20 nm Silicon Patterning and Metal Lift-Off Using Thermal Scanning Probe Lithography

Heiko Wolf,Colin Rawlings,Philipp Mensch,James L. Hedrick,Daniel J. Coady,Urs Duerig,Armin W. Knoll
DOI: https://doi.org/10.1116/1.4901413
2014-11-18
Abstract:The most direct definition of a patterning process' resolution is the smallest half-pitch feature it is capable of transferring onto the substrate. Here we demonstrate that thermal Scanning Probe Lithography (t-SPL) is capable of fabricating dense line patterns in silicon and metal lift-off features at sub 20 nm feature size. The dense silicon lines were written at a half pitch of 18.3 nm to a depth of 5 nm into a 9 nm polyphthalaldehyde thermal imaging layer by t-SPL. For processing we used a three-layer stack comprising an evaporated SiO2 hardmask which is just 2-3 nm thick. The hardmask is used to amplify the pattern into a 50 nm thick polymeric transfer layer. The transfer layer subsequently serves as an etch mask for transfer into silicon to a nominal depth of 60 nm. The line edge roughness (3 sigma) was evaluated to be less than 3 nm both in the transfer layer and in silicon. We also demonstrate that a similar three-layer stack can be used for metal lift-off of high resolution patterns. A device application is demonstrated by fabricating 50 nm half pitch dense nickel contacts to an InAs nanowire.
Materials Science
What problem does this paper attempt to address?
### What problem does this paper attempt to solve? This paper aims to solve the problem of high - resolution patterning with feature sizes below 20 nanometers (sub - 20 nm) in silicon substrates and metal - deposited patterns. Specifically, the author achieved the following goals by optimizing the pattern transfer stack of thermal Scanning Probe Lithography (t - SPL): 1. **Improve the resolution of t - SPL**: By optimizing the pattern transfer stack, t - SPL was able to create dense line patterns with an 18.3 - nanometer half - pitch on a silicon substrate and successfully transfer these patterns into the silicon substrate. 2. **Improve the pattern transfer process**: By using a three - layer stack (including a polymer transfer layer, an evaporated 2 - 3 - nanometer - thick silicon dioxide hard mask, and an imaging resist layer), the problem of amplifying shallow resist patterns was solved, ensuring the successful transfer of high - resolution patterns. 3. **Achieve a high - resolution metal lift - off process**: By changing the transfer layer material (from HM8006 to PMMA), high - resolution nickel metal deposition with complex shapes was achieved, demonstrating the application potential of t - SPL in the metal lift - off process. 4. **Apply to InAs nanowire contacts**: Using t - SPL technology, precise contact electrode deposition on InAs nanowires was achieved, demonstrating the application prospects of this technology in actual device manufacturing. ### Main methods and results 1. **Optimized pattern transfer stack**: - Use a 9 - nanometer - thick polyphthalic anhydride (PPA) as the imaging resist layer. - Use an evaporated 2 - 3 - nanometer - thick silicon dioxide (SiO₂) as the hard mask. - Use a 50 - nanometer - thick HM8006 or PMMA as the transfer layer. 2. **High - resolution silicon patterning**: - Successfully created dense line patterns with an 18.3 - nanometer half - pitch, with a line - edge roughness (LER) of less than 3 nanometers. - The pattern depth was approximately 5 nanometers and could be successfully transferred into the silicon substrate, with a final etching depth of approximately 65 nanometers. 3. **High - resolution metal lift - off process**: - Using PMMA as the transfer layer, successfully achieved 25 - nanometer - thick nickel metal deposition, demonstrating complex high - resolution patterns (such as star - shaped patterns and circular structures). 4. **InAs nanowire contacts**: - Achieved precise contact electrode deposition on InAs nanowires, demonstrating the application potential of t - SPL in nano - device manufacturing. Through these studies, the author has proven that t - SPL is a viable technology that can achieve sub - 20 - nanometer high - resolution structures in silicon substrates and metal - deposited patterns, providing a new approach for future nano - manufacturing.