Surface-plasmon-assisted nanoscale photolithography by polarized light

D. B. Shao,S. C. Chen

DOI: https://doi.org/10.1063/1.1951052

IF: 4

2005-06-20

Applied Physics Letters

Abstract:We demonstrate that photolithography can be extended to a subwavelength resolution for patterning of virtually any substrate by exciting surface plasmons on both a metallic mask and a substrate. Without any additional equipment or added complexity to mask design, one-to-one pattern transfer has been achieved. In this letter, a polarized laser beam of 355 nm wavelength was used as light source to photoinitiate an 80 nm thick photoresist on a silicon substrate coated with titanium of 80 nm thick. Array of line apertures of 100 nm in width were made on gold film or titanium film deposited on a quartz substrate, serving as the mask. Simulation results by finite-difference time-domain method have shown that surface plasmons excited on both the metallic mask and the Ti shield help to spatially confine the light behind the apertures. Experimental results show a strong dependence of pattern transfer on the polarization of light as well as the energy dosage of the light. The feature size using such method could be further scaled down, limited theoretically by the validity of the dielectric function of the material, and practically by the fabrication of the mask.

physics, applied

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to achieve high - resolution lithography technology on the nanoscale. Traditional lithography technology is limited by the optical diffraction limit at scales below the micrometer and cannot achieve more refined pattern fabrication. The authors of this paper propose a nanolithography technology assisted by surface plasmon resonance (surface plasmons). By exciting surface plasmons on the metal mask and the substrate, the light intensity passing through the sub - wavelength aperture is enhanced and localized, thereby breaking through the diffraction limit and achieving pattern transfer on the sub - wavelength scale.

Specifically, the authors used a polarized laser with a wavelength of 355 nanometers as the light source to irradiate an 80 - nanometer - thick photoresist layer on a silicon substrate coated with an 80 - nanometer - thick titanium film. The metal mask is made of a gold or titanium thin film deposited on a quartz substrate and contains a linear hole array with a width of 100 nanometers. The experimental results show that this technology can achieve precise pattern transfer significantly depending on the polarization direction of light and the illumination energy dose, and theoretically the feature size can be further reduced. In practical applications, it is limited by the effectiveness of the dielectric function of materials and the preparation accuracy of the mask.