Vielfalt erfordert Interdisziplinarität

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DOI: https://doi.org/10.1007/s007610050328

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Development of a facile block copolymer method for creating hard mask patterns integrated into semiconductor manufacturing

Tandra Ghoshal,Matthew T. Shaw,Justin D. Holmes,Michael A. Morris

DOI: https://doi.org/10.1007/s12274-016-1194-7

IF: 9.9

2016-07-25

Nano Research

Abstract:Our goal is to develop a facile process to create patterns of inorganic oxides and metals on a substrate that can act as hard masks. These materials should have high etch contrast (compared to silicon) and so allow high-aspect-ratio, high-fidelity pattern transfer whilst being readily integrable in modern semiconductor fabrication (FAB friendly). Here, we show that ultra-small-dimension hard masks can be used to develop large areas of densely packed vertically and horizontally orientated Si nanowire arrays. The inorganic and metal hard masks (Ni, NiO, and ZnO) of different morphologies and dimensions were formed using microphase-separated polystyrene-b-poly(ethylene oxide) (PS-b-PEO) block copolymer (BCP) thin films by varying the BCP molecular weight, annealing temperature, and annealing solvent(s). The self-assembled polymer patterns were solvent-processed, and metal ions were included into chosen domains via a selective inclusion method. Inorganic oxide nanopatterns were subsequently developed using standard techniques. High-resolution transmission electron microscopy studies show that high-aspect-ratio pattern transfer could be affected by standard plasma etch techniques. The masking ability of the different materials was compared in order to create the highest quality uniform and smooth sidewall profiles of the Si nanowire arrays. Notably good performance of the metal mask was seen, and this could impact the use of these materials at small dimensions where conventional methods are severely limited.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
The role of immunoglobulin A in endogenous bronchial defense mechanisms in chronic bronchitis.

T. Medici,H. Buergi

DOI: https://doi.org/10.1164/ARRD.1971.103.6.784

1971-06-01

American Review of Respiratory Disease

Abstract:Investigations were carried out to evaluate the role of secretory immunoglobulin A (11S IgA) in the recurrent infections of chronic bronchitis. The IgA content in sputum was related to damage of the bronchial epithelium and the degree of inflammation using the concentrations of lactic dehydrogenase, deoxyribonucleic acid fibers, and fibrinogen in the sputum as criteria of inflammation. The IgA content in sputum of patients with mild to moderate bronchitis of short duration increased significantly as a result of an inflammation-producing stimulus whereas patients with severe, far advanced bronchitis of long duration failed to show this response. Immunodiffusion studies suggested that in the latter patients the secretory “piece” was absent from the sputum. It is therefore assumed that the production of the secretory “piece” was partially or totally disturbed due to the damage of the bronchial epithelium. Consequently, the synthesis of immunologically active 11S secretory IgA was impaired. The absence of thi...
Lithography with a mask of block copolymer microstructures

Christopher Harrison,Miri Park,Paul M. Chaikin,Richard A. Register,Douglas H. Adamson

DOI: https://doi.org/10.1116/1.589860

1998-03-01

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Abstract:Dense, periodic arrays of holes and troughs have been fabricated in silicon, silicon nitride, and germanium. The holes are approximately 20 nanometers (nm) wide, 20 nm deep, spaced 40 nm apart, and uniformly patterned with 3×1012 holes on a three inch wafer. To access this length scale, self-assembling resists were synthesized to produce either a layer of hexagonally ordered polyisoprene (PI) spheres or parallel cylinders of polybutadiene (PB) in a polystyrene (PS) matrix. The PI spheres or PB cylinders were then degraded and removed with ozone to produce a PS mask for pattern transfer by fluorine-based reactive ion etching. A PS mask of spherical voids was used to fabricate a lattice of holes and a mask of cylindrical voids was used to produce parallel troughs. This technique accesses a length scale difficult to produce by conventional lithography and opens a route for the patterning of surfaces via self-assembly.
Highly Tunable Complementary Micro/Submicro-Nanopatterned Surfaces Combining Block Copolymer Self-Assembly and Colloidal Lithography.

Tongxin Chang,Binyang Du,Haiying Huang,Tianbai He

DOI: https://doi.org/10.1021/acsami.6b07730

IF: 9.5

2016-01-01

ACS Applied Materials & Interfaces

Abstract:Two kinds of large-area ordered and highly tunable micro/submicro-nanopatterned surfaces in a complementary manner were successfully fabricated by elaborately combining block copolymer self-assembly and colloidal lithography. Employing a monolayer of polystyrene (PS) colloidal spheres assembled on top as etching mask, polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) or polystyrene-block-poly(4-vinylpyridine) (PS-b-P4VP) micelle films were patterned into micro/submicro patches by plasma etching, which could be further transferred into micropatterned metal nanoarrays by subsequent metal precursor loading and a second plasma etching. On the other hand, micro/submicro-nanopatterns in a complementary manner were generated via preloading a metal precursor in initial micelle films before the assembly of PS colloidal spheres on top. Both kinds of micro/submicro-nanopatterns showed good fidelity at the micro/submicroscale and nanoscale; meanwhile, they could be flexibly tuned by the sample and processing parameters. Significantly, when the PS colloidal sphere size was reduced to 250 nm, a high-resolution submicro-nanostructured surface with 3-5 metal nanoparticles in each patch or a single-nanoparticle interconnected honeycomb network was achieved. Moreover, by applying gold (Au) nanoparticles as anchoring points, micronanopatterned Au arrays can serve as a flexible template to pattern bovine serum albumin (BSA) molecules. This facile and cost-effective approach may provide a novel platform for fabrication of micropatterned nanoarrays with high tunability and controllability, which are promising in the applications of biological and microelectronic fields.
Directed self-assembly of high-chi block copolymer for nano fabrication of bit patterned media via solvent annealing

Shisheng Xiong,Yves-Andre Chapuis,Lei Wan,He Gao,Xiao Li,Ricardo Ruiz,Paul F Nealey

DOI: https://doi.org/10.1088/0957-4484/27/41/415601

IF: 3.5

2016-09-08

Nanotechnology

Abstract:We report the formation of nanoimprint master templates that can be used for the fabrication of bit patterned media (BPM). The template was formed by directed self-assembly, with solvent annealing, of a symmetric ABA triblock copolymer to form perpendicularly oriented lamellae on chemical patterns. We used a high-χ block copolymer, poly(2-vinyl pyridine)-block-polystyrene-block-poly(2-vinyl pyridine) to achieve smaller feature sizes than are possible with polystyrene-block-poly(methyl methacrylate). The work shows that triblock copolymers can provide a large processing window in terms of pitch commensurability. Using block-selective infiltration (atomic layer deposition with sequential long soaking/purge cycles), an alumina composite with high etch resistance was specifically incorporated into the polar and hydrophilic P2VP domains. Subsequently, the surface pattern was successfully transferred into underlying Si substrates by etching with a fluorine-containing plasma to create a nanoimprint master. The line/space pattern of the nanoimprint master met the BPM fabrication requirement of defectivity <10(-3). For demonstration purposes, the nanoimprint master was used to imprint a replica pattern of photoresist on a quartz wafer.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Sequential Nanopatterned Block Copolymer Self-Assembly on Surfaces.

Nathanael Wu,J. Buriak,C. Jin,E. Luber,B. Olsen

DOI: https://doi.org/10.1021/acs.langmuir.6b01365

IF: 3.9

2016-06-01

Langmuir

Abstract:Bottom-up self-assembly of high-density block-copolymer nanopatterns is of significant interest for a range of technologies, including memory storage and low-cost lithography for on-chip applications. The intrinsic or native spacing of a given block copolymer is dependent upon its size (N, degree of polymerization), composition, and the conditions of self-assembly. Polystyrene-block-polydimethylsiloxane (PS-b-PDMS) block copolymers, which are well-established for the production of strongly segregated single-layer hexagonal nanopatterns of silica dots, can be layered sequentially to produce density-doubled and -tripled nanopatterns. The center-to-center spacing and diameter of the resulting silica dots are critical with respect to the resulting double- and triple-layer assemblies because dot overlap reduces the quality of the resulting pattern. The addition of polystyrene (PS) homopolymer to PS-b-PDMS reduces the size of the resulting silica dots but leads to increased disorder at higher concentrations. The quality of these density-multiplied patterns can be calculated and predicted using parameters easily derived from SEM micrographs of corresponding single and multilayer patterns; simple geometric considerations underlie the degree of overlap of dots and layer-to-layer registration, two important factors for regular ordered patterns, and clearly defined dot borders. Because the higher-molecular-weight block copolymers tend to yield more regular patterns than smaller block copolymers, as defined by order and dot circularity, this sequential patterning approach may provide a route toward harnessing these materials, thus surpassing their native feature density.

Materials Science,Chemistry,Medicine
Unconventional Lithography for Patterned Nanomaterials

Yue Li,Qingfeng Yan,Naoto Koshizaki

DOI: https://doi.org/10.1088/1361-6528/aa98a2

IF: 3.5

2017-01-01

Nanotechnology

Abstract:Patterned nanostructure materials have important applications in photonic crystals, SERS, micro / nanodevices etc [ 1 ] . Conventional nanofabrication technologies for the patterned nanostructures mainly rely on semiconductor micromachining techniques, such as photo and electron beam lithography [ 2, 3 ] . Due to the light diffraction limit and poor throughput, these conventional lithography techniques are reaching their resolution limits and have relatively high costs. Unconventional lithography techniques including colloidal lithography [ 4, 5 ] , self-assembly [ 6, 7 ] etc. thus appear to meet increasing demand for nanofabrication with smaller features, lower cost and more complicated geometries. This focus collection introduces recent advances in unconventional lithography for understanding [ 8 ] . Imbraguglio and Perego et al developed a route to prepare periodic Si nanostructures based on diblock copolymer ( DBC ) masks and reactive ion etching ( RIE ) and investigated the in ﬂ uence of the feature size on the etch rate of Si [ 9 ] . The decrease of the etch depth and etch rate was observed in the mask with the smallest feature size. They transferred the nanometric cylindrical pattern in DBC into a Si substrate. They also investigated the structural and physicochemical in ﬂ uences on the resulting nanostructured Si in order to delineate of various RIE pattern effects. They successfully realized the sub 20 nm features on silicon substrate. Borah et al demonstrated an effective approach to fabricate nanoscale silicon patterns by transferring the PDMS cylindrical and spherical patterns to underlying silicon by an etching processes, which showed promise in guiding self-assembly and
Development of Ordered, Porous (Sub-25 nm Dimensions) Surface Membrane Structures Using a Block Copolymer Approach

Tandra Ghoshal,Justin D. Holmes,Michael A. Morris

DOI: https://doi.org/10.1038/s41598-018-25446-0

IF: 4.6

2018-05-08

Scientific Reports

Abstract:AbstractIn an effort to develop block copolymer lithography to create high aspect vertical pore arrangements in a substrate surface we have used a microphase separated poly(ethylene oxide) -b- polystyrene (PEO-b-PS) block copolymer (BCP) thin film where (and most unusually) PS not PEO is the cylinder forming phase and PEO is the majority block. Compared to previous work, we can amplify etch contrast by inclusion of hard mask material into the matrix block allowing the cylinder polymer to be removed and the exposed substrate subject to deep etching thereby generating uniform, arranged, sub-25 nm cylindrical nanopore arrays. Briefly, selective metal ion inclusion into the PEO matrix and subsequent processing (etch/modification) was applied for creating iron oxide nanohole arrays. The oxide nanoholes (22 nm diameter) were cylindrical, uniform diameter and mimics the original BCP nanopatterns. The oxide nanohole network is demonstrated as a resistant mask to fabricate ultra dense, well ordered, good sidewall profile silicon nanopore arrays on substrate surface through the pattern transfer approach. The Si nanopores have uniform diameter and smooth sidewalls throughout their depth. The depth of the porous structure can be controlled via the etch process.

multidisciplinary sciences
Polymer blend lithography: A versatile method to fabricate nanopatterned self-assembled monolayers

Cheng Huang,Markus Moosmann,Jiehong Jin,Tobias Heiler,Stefan Walheim,Thomas Schimmel

DOI: https://doi.org/10.3762/bjnano.3.71

IF: 3.1

2012-09-04

Beilstein Journal of Nanotechnology

Abstract:A rapid and cost-effective lithographic method, polymer blend lithography (PBL), is reported to produce patterned self-assembled monolayers (SAM) on solid substrates featuring two or three different chemical functionalities. For the pattern generation we use the phase separation of two immiscible polymers in a blend solution during a spin-coating process. By controlling the spin-coating parameters and conditions, including the ambient atmosphere (humidity), the molar mass of the polystyrene (PS) and poly(methyl methacrylate) (PMMA), and the mass ratio between the two polymers in the blend solution, the formation of a purely lateral morphology (PS islands standing on the substrate while isolated in the PMMA matrix) can be reproducibly induced. Either of the formed phases (PS or PMMA) can be selectively dissolved afterwards, and the remaining phase can be used as a lift-off mask for the formation of a nanopatterned functional silane monolayer. This “monolayer copy” of the polymer phase morphology has a topographic contrast of about 1.3 nm. A demonstration of tuning of the PS island diameter is given by changing the molar mass of PS. Moreover, polymer blend lithography can provide the possibility of fabricating a surface with three different chemical components: This is demonstrated by inducing breath figures (evaporated condensed entity) at higher humidity during the spin-coating process. Here we demonstrate the formation of a lateral pattern consisting of regions covered with 1 H ,1 H ,2 H ,2 H -perfluorodecyltrichlorosilane (FDTS) and (3-aminopropyl)triethoxysilane (APTES), and at the same time featuring regions of bare SiO x . The patterning process could be applied even on meter-sized substrates with various functional SAM molecules, making this process suitable for the rapid preparation of quasi two-dimensional nanopatterned functional substrates, e.g., for the template-controlled growth of ZnO nanostructures Bauermann, L. P.; Gerstel, P.; Bill, J.; Walheim, S.; Huang, C.; Pfeifer, J.; Schimmel, T. Langmuir 2010, 26, 3774–3778. doi:10.1021/la903636k.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
A route to engineered high aspect-ratio silicon nanostructures through regenerative secondary mask lithography

Martyna Michalska,Sophia K. Laney,Tao Li,Manish K. Tiwari,Ivan P. Parkin,Ioannis Papakonstantinou

DOI: https://doi.org/10.1039/D1NR07024J

2021-11-03

Abstract:Silicon nanostructuring imparts unique material properties including antireflectivity, antifogging, anti-icing, self-cleaning, and/or antimicrobial activity. To tune these properties however, a good control over features size and shape is essential. Here, a versatile fabrication process is presented to achieve tailored silicon nanostructures (thin/thick pillars, sharp/truncated/re-entrant cones), of pitch down to ~50 nm, and high-aspect ratio (>10). The approach relies on pre-assembled block copolymer (BCP) micelles and their direct transfer into a glass hard mask of an arbitrary thickness, now enabled by our recently reported regenerative secondary mask lithography. During this pattern transfer, not only the mask diameter can be decreased but also uniquely increased; constituting the first method to achieve such tunability without necessitating a different molecular weight BCP. Consequently, the hard mask modulation (height, diameter) advances the flexibility in attainable inter-pillar spacing, aspect ratios, and re-entrant profiles (= glass on silicon). Combined with adjusted silicon etch conditions, the morphology of nanopatterns can be highly customized. The process control and scalability enable uniform patterning of a 6-inch wafer which is verified through cross-wafer excellent antireflectivity (<5%) and water-repellency (advancing contact angle 158°; hysteresis 1°). It is envisioned the implementation of this approach to silicon nanostructuring to be far-reaching, facilitating fundamental studies and targeting applications spanning solar panels, antifogging/antibacterial surfaces, sensing, amongst many others.

Chemical Physics,Plasma Physics
Enabling Sub-10nm Lithography with Atomic Layer Deposition and Block Copolymer Self Assembly

Ricardo Ruiz,Yves-Andre Chapuis,Lei Wan,Shisheng Xiong,He Gao,Kanayialal Patel,Elizabeth Dobisz,Alexei Bogdanov,Paul Nealey,Thomas Albrecht

DOI: https://doi.org/10.1149/ma2014-02/30/1610

2014-01-01

ECS Meeting Abstracts

Abstract:Block copolymer lithography, an alternative lithographic technique by which self-assembled patterns made from block copolymer thin films are used as lithographic masks, has achieved a high enough level of maturity to be considered for nanofabrication in magnetic recording bit patterned media and in some applications in the semiconductor industry. As the demand for lithographic dimensions squeezes into the single-digit nm scale, pairing block copolymer materials that segregate at these dimensions with adequate pattern transfer techniques is increasingly difficult. For example, PS-b-PMMA, the most mature block copolymer system can only form line/space patterns with pattern transfer above 10 nm. Other promising materials like P2VP-PS-P2VP triblocks, however, lack sufficient etch contrast for reactive ion etching. Here, we present a nanofabrication strategy that integrates atomic layer deposition, ALD, with block copolymer lithography to enable fabrication of sub-10nm features for high density magnetic storage. The selective, cyclic and self-terminating nature of the materials synthesis within ALD reactors provides powerful nanofabrication tools. In particular, two of these tools stand out as enablers for high density patterning: First, the chemical selectivity of the organometallic precursors has facilitated selective synthesis inside porous polymeric materials. Second, the conformality afforded by the self-terminating nature of the ALD reactions has proven to be ideally suited for feature doubling in self-aligned double patterning, SADP. Integrating these powerful tools with block copolymer lithography opens new possibilities in two fronts: On the one hand, it is possible to generate hybrid nanocomposites with nanometer-scale resolution and high etching contrast. This is particularly useful for high resolution block copolymer materials for which no natural etch contrast exists such as P2VP-PS-P2VP triblocks. On the other hand, it is possible to use the already sub-lithographic features obtained by standard PS-b-PMMA block copolymer lithography as the starting point for an additional density multiplication using spacer lines grown by ALD for SADP. Be it for selective infiltration synthesis in block copolymer patterns or for the precise conformal growth in nanostructures made from block copolymers, ALD is likely to emerge as an ideal complimentary technique to block copolymer self assembly to enable sub-10nm lithography.
Ultra-Fast Block Copolymers for Sub-5 Nm Lithographic Patterning

Xuemiao Li,Chenxu Wang,Jianuo Zhou,Zhenyu Yang,Yan Zhang,Hai Deng

DOI: https://doi.org/10.2494/photopolymer.31.483

2018-01-01

Journal of Photopolymer Science and Technology

Abstract:DSA lithography is a chemical assisted patterning approach, which has attracted a great deal of interest due to its potential high resolution and low cost. Researchers around the world discovered some sub-5 nm high resolution DSA materials, and all these materials required high annealing temperature or long annealing time. In this study, we design and synthesize some PS-typed and PMMA-typed fluoro-containing BCPs. The finest half pitch of these BCPs is less than 5 nm. And the thermal annealing time of PS-typed BCPs is optimized to 1 min, which has been the highest assembly speed for sub-5 nm nanopatterning. The self-assembly speed of PMMA-typed BCPs is much slower than the PS-typed. We further exhibit that ordered nanopatterns are assembled to appear straight 10 nm lines in the silicon template.
Directed Self‐Assembly of Polystyrene‐Block‐Polyhedral Oligomeric Silsesquioxane Monolayer by Nano‐Trench for Nanopatterning

Cheng‐Hsun Tung,Feng Ye,Wei‐Yi Li,The Anh Nguyen,Ming‐Chang Lee,Tao Wen,Zi‐Hao Guo,Stephen Z. D. Cheng,Rong‐Ming Ho

DOI: https://doi.org/10.1002/smll.202403581

IF: 13.3

2024-07-20

Small

Abstract:Engineering fast and reliable nanostructures with small feature size from the self‐assembly of giant surfactants is appealing in next‐generation lithography. Herein, well‐defined line nanopatterns with sub 10 nm feature size can be fabricated via directed self‐assembly of PS‐b‐oDMS7POSS, giving small feature size from self‐assembly and excellent etching contrast for reactive ion etching to create topographic nanopatterns for aimed lithographic applications. This work pioneers to combine fast self‐assembly of polyhedral oligomeric silsesquioxanes (POSS) nanocage‐based giant surfactants with high etching contrast and directed self‐assembly for reliable long‐range lateral order to create well‐aligned sub‐10 nm line nanopatterns via reactive ion etching (RIE). Polystyrene‐block‐oligo(dimethylsiloxane) substituted POSS (PS‐b‐oDMS7POSS) with seven oligo(dimethylsiloxane) at the corners of the POSS nanocage and one polystyrene (PS) tail is designed and synthesized as a giant surfactant with self‐assembly behaviors like block copolymer (BCP). In contrast to BCP, oDMS7POSS gives a volume‐persistent "nanoatom" particle with higher mobility for fast self‐assembly and higher segregation strength with PS for smaller feature size. By taking advantage of directed self‐assembly using nano‐trench fabricated by electron beam lithography, well‐ordered nanostructured monolayer with well‐aligned parallel oDMS7POSS cylinders can be formed by confined self‐assembly within the nano‐trench. With the optimization of the RIE treatment using O2 as an etchant, the high etching contrast from the oDMS7POSS and PS gives the formation of well‐defined line nanopatterns with sub‐10 nm critical dimension that can serve as a mask for pattern transfer in lithography. These results demonstrate a cost‐effective approach for nanopatterning by utilizing a creatively designed giant surfactant with sub‐10 nm feature size and excellent etching contrast for modern lithographic applications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
A Facile Method of Forming Nanoscale Patterns on Poly(ethylene Glycol)-Based Surfaces by Self-Assembly of Randomly Grafted Block Copolymer Brushes.

Xiang Gao,Wei Feng,Shiping Zhu,Heather Sheardown,John L. Brash

DOI: https://doi.org/10.1021/la800729c

IF: 3.9

2008-01-01

Langmuir

Abstract:Poly(oligo(ethylene glycol) methacrylate) (POEGMA) block poly(methyl methacrylate) (PMMA) brushes were synthesized on the silicon wafer surfaces by the surface-initiated atom transfer radical polymerization (ATRP) method. Atomic force microscopy, ellipsometry, and water contact angle methods were employed to study the surface morphology and stimulus-response behavior. It was found that simple solvent treatments could induce phase segregation of the POEGMA and PMMA segments thus introducing nanoscale patterns. The feature size could be less than 10 nm and was tunable on the nanoscale. Various patterns including spherical aggregates, wormlike aggregates, stripe patterns, perforated layers, and complete overlayers were obtained through adjusting the upper block layer thickness. These patterns could switch between the different morphologies reversibly after the treatment with selective solvents.
High‐Resolution Study of Changes in Morphology and Chemistry of Cylindrical PS‐b‐PMMA Block Copolymer Nanomasks during Mask Development

Julius Bürger,Harikrishnan Venugopal,Daniel Kool,Alejandro Gonzalez Orive,Guido Grundmeier,Katharina Brassat,Jörg K.N. Lindner,Teresa de los Arcos

DOI: https://doi.org/10.1002/admi.202200962

IF: 5.4

2022-08-30

Advanced Materials Interfaces

Abstract:The chemistry, morphology, line edge roughness, and interfacial width of cylindrical nanopores created using the microphase separation of a polystyrene‐b‐polymethylmethacrylate (PS‐b‐PMMA) block‐copolymer and either UV light acetic acid or reactive ion etching treatment for subsequent PMMA removal are revealed at sub‐nanometer resolution using low‐keV Cs‐corrected analytical (scanning) transmission electron microscopy combined with X‐ray photoelectron spectroscopy and polarization‐modulated infrared reflection‐absorption spectroscopy. Nanolithography with self‐assembled block copolymers (BCPs) is an emerging competitive alternative to conventional lithography, which is currently reaching its limits with regard to resolution and economic feasibility. For high‐resolution lithography, both the abruptness of BCP internal interfaces between self‐assembled polymer nanodomains and the processing steps used to selectively remove one of the polymers are crucial. This paper presents a detailed investigation of the chemistry, the mask wall morphology, and the line edge roughness (LER) of self‐assembled nanomasks from polystyrene‐b‐polymethylmethacrylate (PS‐b‐PMMA) before and after selective removal of the PMMA nanodomains. For the latter, either wet or plasma etching are employed and their impact on both the morphology and chemistry of resulting nanomasks is analysed using analytical (scanning) transmission electron microscopy (STEM), X‐ray photoelectron spectroscopy and polarization‐modulated infrared reflection‐absorption spectroscopy. Dedicated image analysis tools are developed to determine for the first time the LER of cylindrical openings in PS masks from STEM dark‐field images at sub‐nanometer resolution. Applying these tools prior to and after PMMA removal from the BCP films, the statistics of feature sizes, LERs, and interfacial widths are determined. In addition, the impact of wet and dry etching processes on PS‐co‐PMMA random copolymer brushes required for substrate functionalization is evaluated.

materials science, multidisciplinary,chemistry
Directed Self-Assembly of Polystyrene-b-poly(propylene Carbonate) on Chemical Patterns Via Thermal Annealing for Next Generation Lithography

Guan-Wen Yang,Guang-Peng Wu,Xuanxuan Chen,Shisheng Xiong,Christopher G. Arges,Shengxiang Ji,Paul F. Nealey,Xiao-Bing Lu,Donald J. Darensbourg,Zhi-Kang Xu

DOI: https://doi.org/10.1021/acs.nanolett.6b05059

IF: 10.8

2017-01-01

Nano Letters

Abstract:Directed self-assembly (DSA) of block copolymers (BCPs) combines advantages of conventional photolithography and polymeric materials and shows competence in semiconductors and data storage applications. Driven by the more integrated, much smaller and higher performance of the electronics, however, the industry standard polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) in DSA strategy cannot meet the rapid development of lithography technology because its intrinsic limited Flory-Huggins interaction parameter (χ). Despite hundreds of block copolymers have been developed, these BCPs systems are usually subject to a trade-off between high χ and thermal treatment, resulting in incompatibility with the current nanomanufacturing fab processes. Here we discover that polystyrene-b-poly(propylene carbonate) (PS-b-PPC) is well qualified to fill key positions on DSA strategy for the next-generation lithography. The estimated χ-value for PS-b-PPC is 0.079, that is, two times greater than PS-b-PMMA (χ = 0.029 at 150 °C), while processing the ability to form perpendicular sub-10 nm morphologies (cylinder and lamellae) via the industry preferred thermal-treatment. DSA of lamellae forming PS-b-PPC on chemoepitaxial density multiplication demonstrates successful sub-10 nm long-range order features on large-area patterning for nanofabrication. Pattern transfer to the silicon substrate through industrial sequential infiltration synthesis is also implemented successfully. Compared with the previously reported methods to orientation control BCPs with high χ-value (including solvent annealing, neutral top-coats, and chemical modification), the easy preparation, high χ value, and etch selectivity while enduring thermal treatment demonstrates PS-b-PPC as a rare and valuable candidate for advancing the field of nanolithography.
A New Strategy of Lithography Based on Phase Separation of Polymer Blends

Xu Guo,Long Liu,Zhe Zhuang,Xin Chen,Mengyang Ni,Yang Li,Yushuang Cui,Peng Zhan,Changsheng Yuan,Haixiong Ge,Zhenlin Wang,Yanfeng Chen

DOI: https://doi.org/10.1038/srep15947

IF: 4.6

2015-01-01

Scientific Reports

Abstract:Herein, we propose a new strategy of maskless lithographic approach to fabricate micro/nano-porous structures by phase separation of polystyrene (PS)/Polyethylene glycol (PEG) immiscible polymer blend. Its simple process only involves a spin coating of polymer blend followed by a development with deionized water rinse to remove PEG moiety, which provides an extremely facile, low-cost, easily accessible nanofabrication method to obtain the porous structures with wafer-scale. By controlling the weight ratio of PS/PEG polymer blend, its concentration and the spin-coating speed, the structural parameters of the porous nanostructure could be effectively tuned. These micro/nano porous structures could be converted into versatile functional nanostructures in combination with follow-up conventional chemical and physical nanofabrication techniques. As demonstrations of perceived potential applications using our developed phase separation lithography, we fabricate wafer-scale pure dielectric (silicon)-based two-dimensional nanostructures with high broadband absorption on silicon wafers due to their great light trapping ability, which could be expected for promising applications in the fields of photovoltaic devices and thermal emitters with very good performances and Ag nanodot arrays which possess a surface enhanced Raman scattering (SERS) enhancement factor up to 1.64 × 10 8 with high uniformity across over an entire wafer.
Directed Self-Assembly of Triblock Copolymer on Chemical Patterns for Sub-10-nm Nanofabrication via Solvent Annealing

Shisheng Xiong,Lei Wan,Yoshihito Ishida,Yves-Andre Chapuis,Gordon S. W. Craig,Ricardo Ruiz,Paul F. Nealey

DOI: https://doi.org/10.1021/acsnano.6b03667

IF: 17.1

2016-01-01

ACS Nano

Abstract:Directed self-assembly (DSA) of block copolymers (BCPs) is a leading strategy to pattern at sublithographic resolution in the technology roadmap for semiconductors and is the only known solution to fabricate nanoimprint templates for the production of bit pattern media. While great progress has been made to implement block copolymer lithography with features in the range of 10–20 nm, patterning solutions below 10 nm are still not mature. Many BCP systems self-assemble at this length scale, but challenges remain in simultaneously tuning the interfacial energy atop the film to control the orientation of BCP domains, designing materials, templates, and processes for ultra-high-density DSA, and establishing a robust pattern transfer strategy. Among the various solutions to achieve domains that are perpendicular to the substrate, solvent annealing is advantageous because it is a versatile method that can be applied to a diversity of materials. Here we report a DSA process based on chemical contrast templates a...
Directed Self-Assembly of Block Copolymers for Sub-10 Nm Fabrication

Yu Chen,Shisheng Xiong

DOI: https://doi.org/10.1088/2631-7990/aba3ae

2020-01-01

International Journal of Extreme Manufacturing

Abstract:Directed self-assembly (DSA) emerges as one of the most promising new patterning techniques for single digit miniaturization and next generation lithography. DSA achieves high-resolution patterning by molecular assembly that circumvents the diffraction limit of conventional photolithography. Recently, the International Roadmap for Devices and Systems listed DSA as one of the advanced lithography techniques for the fabrication of 3-5 nm technology node devices. DSA can be combined with other lithography techniques, such as extreme ultra violet (EUV) and 193 nm immersion (193i), to further enhance the patterning resolution and the device density. So far, DSA has demonstrated its superior ability for the fabrication of nanoscale devices, such as fin field effect transistor and bit pattern media, offering a variety of configurations for high-density integration and low-cost manufacturing. Over 1 T in(-2) device density can be achieved either by direct templating or coupled with nanoimprinting to improve the throughput. The development of high chi block copolymer further enhances the patterning resolution of DSA. In addition to its superiority in high-resolution patterning, the implementation of DSA on a 300 mm pivot line fully demonstrates its potential for large-scale, high-throughput, and cost-effective manufacturing in industrial environment.
Directed Self‐Assembly of Polystyrene‐Block‐Polyhedral Oligomeric Silsesquioxane Monolayer by Nano‐Trench for Nanopatterning (Small 48/2024)

Cheng‐Hsun Tung,Feng Ye,Wei‐Yi Li,The Anh Nguyen,Ming‐Chang Lee,Tao Wen,Zi‐Hao Guo,Stephen Z. D. Cheng,Rong‐Ming Ho

DOI: https://doi.org/10.1002/smll.202470359

IF: 13.3

2024-11-29

Small

Abstract:Nanopatterning In article number 2403581, Stephen Z. D. Cheng, Rong‐Ming Ho, and co‐workers demonstrate well‐defined line nanopatterns with sub‐10 nm feature size fabricated via directed self‐assembly of POSS‐based giant surfactant. This giant surfactant exhibits strong segregation strength, and fast self‐assembly as well as excellent etching contrast, enabling reactive ion etching to create topographic nanopatterns. This bottom‐up approach suggests a cost‐effective method for next‐generation lithography applications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

Vielfalt erfordert Interdisziplinarität

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