Directed Self‐Assembly of Polystyrene‐Block‐Polyhedral Oligomeric Silsesquioxane Monolayer by Nano‐Trench for Nanopatterning (Small 48/2024)

Cheng‐Hsun Tung,Feng Ye,Wei‐Yi Li,The Anh Nguyen,Ming‐Chang Lee,Tao Wen,Zi‐Hao Guo,Stephen Z. D. Cheng,Rong‐Ming Ho
DOI: https://doi.org/10.1002/smll.202470359
IF: 13.3
2024-11-29
Small
Abstract:Nanopatterning In article number 2403581, Stephen Z. D. Cheng, Rong‐Ming Ho, and co‐workers demonstrate well‐defined line nanopatterns with sub‐10 nm feature size fabricated via directed self‐assembly of POSS‐based giant surfactant. This giant surfactant exhibits strong segregation strength, and fast self‐assembly as well as excellent etching contrast, enabling reactive ion etching to create topographic nanopatterns. This bottom‐up approach suggests a cost‐effective method for next‐generation lithography applications.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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