Directed Self-Assembly of Poly(styrene-B-vinyl Acetate) Block Copolymers on Chemical Patterns for Sub-10 Nm Nanopatterning Via Thermal Annealing

Hanwen Lai,Xiaohui Zhang,Guangcheng Huang,Yadong Liu,Weihua Li,Shengxiang Ji
DOI: https://doi.org/10.1016/j.polymer.2022.125277
IF: 4.6
2022-01-01
Polymer
Abstract:Directed self-assembly (DSA) of block copolymers (BCPs) is an effective approach for the fabrication of sub-10 nm features for semiconductor devices. Although many high-chi BCPs have been developed for DSA, the major-ity of them has a significant difference in surface energies (gamma s) between two blocks. Here we report the synthesis and self-assembly of poly (styrene -b-vinyl acetate) (PS-b-PVAc). PS-b-PVAc has a higher Flory-Huggins interac-tion parameter (chi) than poly (styrene -b-methyl methacrylate) (PS-b-PMMA) and the smallest achievable period (LO) is 18.2 nm. PS and PVAc have nearly equal gamma s and a perpendicular orientation of domains is obtained on random copolymer brushes under thermal annealing. DSA of PS-b-PVAc (SV-1 and SV-2) is successfully demonstrated in the thin films on chemical patterns, and the feature size down to 9.5 nm is obtained in DSA of SV-4 with 2 x density multiplication. These results demonstrate that PS-b-PVAc could be a candidate BCP for next-generation DSA lithography.
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