Abstract:Block copolymer lithography, an alternative lithographic technique by which self-assembled patterns made from block copolymer thin films are used as lithographic masks, has achieved a high enough level of maturity to be considered for nanofabrication in magnetic recording bit patterned media and in some applications in the semiconductor industry. As the demand for lithographic dimensions squeezes into the single-digit nm scale, pairing block copolymer materials that segregate at these dimensions with adequate pattern transfer techniques is increasingly difficult. For example, PS-b-PMMA, the most mature block copolymer system can only form line/space patterns with pattern transfer above 10 nm. Other promising materials like P2VP-PS-P2VP triblocks, however, lack sufficient etch contrast for reactive ion etching. Here, we present a nanofabrication strategy that integrates atomic layer deposition, ALD, with block copolymer lithography to enable fabrication of sub-10nm features for high density magnetic storage. The selective, cyclic and self-terminating nature of the materials synthesis within ALD reactors provides powerful nanofabrication tools. In particular, two of these tools stand out as enablers for high density patterning: First, the chemical selectivity of the organometallic precursors has facilitated selective synthesis inside porous polymeric materials. Second, the conformality afforded by the self-terminating nature of the ALD reactions has proven to be ideally suited for feature doubling in self-aligned double patterning, SADP. Integrating these powerful tools with block copolymer lithography opens new possibilities in two fronts: On the one hand, it is possible to generate hybrid nanocomposites with nanometer-scale resolution and high etching contrast. This is particularly useful for high resolution block copolymer materials for which no natural etch contrast exists such as P2VP-PS-P2VP triblocks. On the other hand, it is possible to use the already sub-lithographic features obtained by standard PS-b-PMMA block copolymer lithography as the starting point for an additional density multiplication using spacer lines grown by ALD for SADP. Be it for selective infiltration synthesis in block copolymer patterns or for the precise conformal growth in nanostructures made from block copolymers, ALD is likely to emerge as an ideal complimentary technique to block copolymer self assembly to enable sub-10nm lithography.

Ultra-fast Directly Self-Assembly Materials for Sub-5 Nm Lithographic Patterning

Synthesis and Directed Self-Assembly of Modified PS-b-PMMA for Sub-10 Nm Nanolithography

Directed Self-Assembly of Ternary Blends of Block Copolymer and Homopolymers on Chemical Patterns

Ultra-Fast Block Copolymers for Sub-5 Nm Lithographic Patterning

Design and synthesis of novel directed self-assembly block copolymers for sub-10 nm lithography application

Directed Self-Assembly of Block Copolymers for Sub-10 Nm Fabrication

Directed Self-Assembly of Hierarchical Supramolecular Block Copolymer Thin Films on Chemical Patterns

Boundary-Directed Epitaxy of Block Copolymers

Directed Self-Assembly of Poly(styrene-B-vinyl Acetate) Block Copolymers on Chemical Patterns for Sub-10 Nm Nanopatterning Via Thermal Annealing

Directed Self-Assembly of Polystyrene-b-poly(propylene Carbonate) on Chemical Patterns Via Thermal Annealing for Next Generation Lithography

Directed Self-Assembly of Triblock Copolymer on Chemical Patterns for Sub-10-nm Nanofabrication via Solvent Annealing

Directed self-assembly of block copolymers by chemical or topographical guiding patterns: Optimizing molecular architecture, thin-film properties, and kinetics

Development of 90 NM & 5 NM High Resolution Advanced Lithographic Patterning Materials

Fast Self-Assembly of Polystyrene-B-poly(fluoro Methacrylate) into Sub-5 Nm Microdomains for Nanopatterning Applications

Directed Self-Assembly by Sparsely Prepatterned Substrates with Self-Responsive Polymer Brushes.

Synthesis of Liquid Crystalline Block Copolymers Self-assembled into Sub-5 Nm Microdomains

Si Containing Block Copolymers Quickly Assemble into Sub-6 Nm Domains

Enabling Sub-10nm Lithography with Atomic Layer Deposition and Block Copolymer Self Assembly

DSA in Combination with DUV Lithography for Sub-10 Nm Manufacturing

A Facile Method of Forming Nanoscale Patterns on Poly(ethylene Glycol)-Based Surfaces by Self-Assembly of Randomly Grafted Block Copolymer Brushes.

Manipulating the processing window of directed self-assembly in contact hole shrinking with binary block copolymer/homopolymer blending