Abstract:Directed self-assembly (DSA) of block copolymers (BCPs) combines advantages of conventional photolithography and polymeric materials and shows competence in semiconductors and data storage applications. Driven by the more integrated, much smaller and higher performance of the electronics, however, the industry standard polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) in DSA strategy cannot meet the rapid development of lithography technology because its intrinsic limited Flory-Huggins interaction parameter (χ). Despite hundreds of block copolymers have been developed, these BCPs systems are usually subject to a trade-off between high χ and thermal treatment, resulting in incompatibility with the current nanomanufacturing fab processes. Here we discover that polystyrene-b-poly(propylene carbonate) (PS-b-PPC) is well qualified to fill key positions on DSA strategy for the next-generation lithography. The estimated χ-value for PS-b-PPC is 0.079, that is, two times greater than PS-b-PMMA (χ = 0.029 at 150 °C), while processing the ability to form perpendicular sub-10 nm morphologies (cylinder and lamellae) via the industry preferred thermal-treatment. DSA of lamellae forming PS-b-PPC on chemoepitaxial density multiplication demonstrates successful sub-10 nm long-range order features on large-area patterning for nanofabrication. Pattern transfer to the silicon substrate through industrial sequential infiltration synthesis is also implemented successfully. Compared with the previously reported methods to orientation control BCPs with high χ-value (including solvent annealing, neutral top-coats, and chemical modification), the easy preparation, high χ value, and etch selectivity while enduring thermal treatment demonstrates PS-b-PPC as a rare and valuable candidate for advancing the field of nanolithography.

Development of 90 NM & 5 NM High Resolution Advanced Lithographic Patterning Materials

High Throughput Laser Nano Direct Writing Technique

DSA in Combination with DUV Lithography for Sub-10 Nm Manufacturing

Directed Self-Assembly of Block Copolymers for Sub-10 Nm Fabrication

Ultra-fast Directly Self-Assembly Materials for Sub-5 Nm Lithographic Patterning

Ultra-Fast Block Copolymers for Sub-5 Nm Lithographic Patterning

Multiple-Patterning Nanosphere Lithography for Fabricating Periodic Three-Dimensional Hierarchical Nanostructures.

Directed Self-Assembly of Triblock Copolymer on Chemical Patterns for Sub-10-nm Nanofabrication via Solvent Annealing

Patterned Microstructure Array Fabrication By Using A Novel Standing Surface Acoustic Wave Device

Directed Self-Assembly of Polystyrene-b-poly(propylene Carbonate) on Chemical Patterns Via Thermal Annealing for Next Generation Lithography

Directed self-assembly of block copolymers by chemical or topographical guiding patterns: Optimizing molecular architecture, thin-film properties, and kinetics

Directed Self-Assembly of Poly(styrene-B-vinyl Acetate) Block Copolymers on Chemical Patterns for Sub-10 Nm Nanopatterning Via Thermal Annealing

Advances in direct optical lithography of nanomaterials

Advanced nano-lithography technology

Unconventional Lithography for Patterned Nanomaterials

Synthesis and Directed Self-Assembly of Modified PS-b-PMMA for Sub-10 Nm Nanolithography

An Effective Layout Decomposition Method for DSA with Multiple Patterning in Contact-Hole Generation.

Combining Double Patterning with Self-Assembled Block Copolymer Lamellae to Fabricate 10.5 Nm Full-Pitch Line/space Patterns

Direct Patterning of Metal Chalcogenide Semiconductor Materials

Step Coverage and Dry Etching Process Improvement of Amorphous Carbon Hard Mask

Synthesis of Fluorine-containing Polyacrylamide Block Copolymer and Their Application for Rapidly Formation of Sub-10 Nm Microdomains