Abstract:Directed self-assembly (DSA) of block copolymers (BCPs) combines advantages of conventional photolithography and polymeric materials and shows competence in semiconductors and data storage applications. Driven by the more integrated, much smaller and higher performance of the electronics, however, the industry standard polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) in DSA strategy cannot meet the rapid development of lithography technology because its intrinsic limited Flory-Huggins interaction parameter (χ). Despite hundreds of block copolymers have been developed, these BCPs systems are usually subject to a trade-off between high χ and thermal treatment, resulting in incompatibility with the current nanomanufacturing fab processes. Here we discover that polystyrene-b-poly(propylene carbonate) (PS-b-PPC) is well qualified to fill key positions on DSA strategy for the next-generation lithography. The estimated χ-value for PS-b-PPC is 0.079, that is, two times greater than PS-b-PMMA (χ = 0.029 at 150 °C), while processing the ability to form perpendicular sub-10 nm morphologies (cylinder and lamellae) via the industry preferred thermal-treatment. DSA of lamellae forming PS-b-PPC on chemoepitaxial density multiplication demonstrates successful sub-10 nm long-range order features on large-area patterning for nanofabrication. Pattern transfer to the silicon substrate through industrial sequential infiltration synthesis is also implemented successfully. Compared with the previously reported methods to orientation control BCPs with high χ-value (including solvent annealing, neutral top-coats, and chemical modification), the easy preparation, high χ value, and etch selectivity while enduring thermal treatment demonstrates PS-b-PPC as a rare and valuable candidate for advancing the field of nanolithography.

Synthesis and Directed Self-Assembly of Modified PS-b-PMMA for Sub-10 Nm Nanolithography

Ultra-fast Directly Self-Assembly Materials for Sub-5 Nm Lithographic Patterning

Sub-10 Nm Feature Sizes of Disordered Polystyrene-block-poly(methyl Methacrylate) Copolymer Films Achieved by Ionic Liquid Additives with Selectively Distributed Charge Interactions

Directed Self-Assembly of Ternary Blends of Block Copolymer and Homopolymers on Chemical Patterns

Design and synthesis of novel directed self-assembly block copolymers for sub-10 nm lithography application

Directed Self-Assembly of Poly(styrene-B-vinyl Acetate) Block Copolymers on Chemical Patterns for Sub-10 Nm Nanopatterning Via Thermal Annealing

Synthesis and Characterization of Amphiphilic Centipede-Like Copolymer PS-PS-PMAA

Directed Self-Assembly of Polystyrene-b-poly(propylene Carbonate) on Chemical Patterns Via Thermal Annealing for Next Generation Lithography

Ultra-Fast Block Copolymers for Sub-5 Nm Lithographic Patterning

Directed Self-Assembly of Block Copolymers for Sub-10 Nm Fabrication

Directed Self-Assembly of Triblock Copolymer on Chemical Patterns for Sub-10-nm Nanofabrication via Solvent Annealing

Synthesis of Liquid Crystalline Block Copolymers Self-assembled into Sub-5 Nm Microdomains

Synthesis and Morphology Studies of Polysiloxane-based Triblock Copolymers

Manipulating the processing window of directed self-assembly in contact hole shrinking with binary block copolymer/homopolymer blending

Self-assembly of Blended PS-b-P2VP Block Copolymers

Tuning PDMS brush chemistry by UV-O3 exposure for PS-b-PDMS microphase separation and directed self-assembly

Directed self-assembly of block copolymers by chemical or topographical guiding patterns: Optimizing molecular architecture, thin-film properties, and kinetics

Modeling of block copolymer dry etching for directed self-assembly lithography

High molecular weight block copolymer lithography for nanofabrication of hard mask and photonic nanostructures

Focused Solar Annealing for Block Copolymer Fast Self-Assembly

Synthesis of Fluorine-containing Polyacrylamide Block Copolymer and Their Application for Rapidly Formation of Sub-10 Nm Microdomains