Si Containing Block Copolymers Quickly Assemble into Sub-6 Nm Domains

Hai Deng,Jianuo Zhou,Xuemiao Li,Zhenyu Yang

DOI: https://doi.org/10.1039/d1py01526e

IF: 4.6

2022-01-01

Polymer Chemistry

Abstract:The directed self-assembly (DSA) of block copolymers (BCPs) is a potential patterning technology for sub-7 nm lithography.

What problem does this paper attempt to address?

Boundary-Directed Epitaxy of Block Copolymers

Robert M. Jacobberger,Vikram Thapar,Guang-Peng Wu,Tzu-Hsuan Chang,Vivek Saraswat,Austin J. Way,Katherine R. Jinkins,Zhenqiang Ma,Paul F. Nealey,Su-Mi Hur,Shisheng Xiong,Michael S. Arnold

DOI: https://doi.org/10.1038/s41467-020-17938-3

IF: 16.6

2020-01-01

Nature Communications

Abstract:Directed self-assembly of block copolymers (BCPs) enables nanofabrication at sub-10 nm dimensions, beyond the resolution of conventional lithography. However, directing the position, orientation, and long-range lateral order of BCP domains to produce technologically-useful patterns is a challenge. Here, we present a promising approach to direct assembly using spatial boundaries between planar, low-resolution regions on a surface with different composition. Pairs of boundaries are formed at the edges of isolated stripes on a background substrate. Vertical lamellae nucleate at and are pinned by chemical contrast at each stripe/substrate boundary, align parallel to boundaries, selectively propagate from boundaries into stripe interiors (whereas horizontal lamellae form on the background), and register to wide stripes to multiply the feature density. Ordered BCP line arrays with half-pitch of 6.4 nm are demonstrated on stripes >80 nm wide. Boundary-directed epitaxy provides an attractive path towards assembling, creating, and lithographically defining materials on sub-10 nm scales. Directing the position, orientation, and long-range lateral order of block copolymer domains to produce technologically-useful, sublithographic patterns is a challenge. Here, the authors present a promising approach to overcome the challenge by directing assembly using spatial boundaries between planar, low-resolution regions on a surface with different composition.
Synthesis of Liquid Crystalline Block Copolymers Self-assembled into Sub-5 Nm Microdomains

Hui Cao,Xuemiao Li,Yuyun Liu,Hai Deng

DOI: https://doi.org/10.2494/photopolymer.32.413

2019-01-01

Journal of Photopolymer Science and Technology

Abstract:The directed self-assembly (DSA) of block copolymers (BCPs) is a potentially feasible option for next-generation lithography, due to its potential high resolution and low cost. The smallest domain spacing of conventional BCPs such as polystyrene-b-poly(methyl methacrylate) (PS-b-PMMA) are larger than 10 nm, which limits their application in sub-10 nm lithography when compared with EUVL technology. BCPs with high chi value could further reduce the domain spacing to achieve higher resolution. In this work, we synthesized a series of BCPs with biphenyl-typed liquid crystalline (LC) block and fluorine-containing block. With strongly segregated repulsion between isotropic coil and anisotropic LC blocks, the new BCPs yielded highly ordered nanostructures with lamellar and hexagonal morphologies. The smallest feature size was 4.8 nm, showing great potential for sub-5 nm patterning technology.
Directed Self-Assembly of Triblock Copolymer on Chemical Patterns for Sub-10-nm Nanofabrication via Solvent Annealing

Shisheng Xiong,Lei Wan,Yoshihito Ishida,Yves-Andre Chapuis,Gordon S. W. Craig,Ricardo Ruiz,Paul F. Nealey

DOI: https://doi.org/10.1021/acsnano.6b03667

IF: 17.1

2016-01-01

ACS Nano

Abstract:Directed self-assembly (DSA) of block copolymers (BCPs) is a leading strategy to pattern at sublithographic resolution in the technology roadmap for semiconductors and is the only known solution to fabricate nanoimprint templates for the production of bit pattern media. While great progress has been made to implement block copolymer lithography with features in the range of 10–20 nm, patterning solutions below 10 nm are still not mature. Many BCP systems self-assemble at this length scale, but challenges remain in simultaneously tuning the interfacial energy atop the film to control the orientation of BCP domains, designing materials, templates, and processes for ultra-high-density DSA, and establishing a robust pattern transfer strategy. Among the various solutions to achieve domains that are perpendicular to the substrate, solvent annealing is advantageous because it is a versatile method that can be applied to a diversity of materials. Here we report a DSA process based on chemical contrast templates a...
Design and synthesis of novel directed self-assembly block copolymers for sub-10 nm lithography application

Jie Li,Xuemiao Li,Hai Deng

DOI: https://doi.org/10.1109/CSTIC.2017.7919776

2017-01-01

Abstract:A series of novel block copolymers, PS-b-PPDMA, were synthesized via anionic polymerization. Small-angle X-ray scattering (SAXS) spectra and Transmission electron microscope (TEM) images indicated lamella or hexagonal structures with a sub-10 nm half-pitch formed under mild thermal annealing condition. The assembly condition is as quick as 5 min or less at 100 °C thermal annealing. The smallest lamellar D spacing is 11.8 nm. These block copolymers show the potential as DSA material with high intrinsic resolution for sub-10 nm and beyond nodes.
Directed Self-Assembly of Block Copolymers for Sub-10 Nm Fabrication

Yu Chen,Shisheng Xiong

DOI: https://doi.org/10.1088/2631-7990/aba3ae

2020-01-01

International Journal of Extreme Manufacturing

Abstract:Directed self-assembly (DSA) emerges as one of the most promising new patterning techniques for single digit miniaturization and next generation lithography. DSA achieves high-resolution patterning by molecular assembly that circumvents the diffraction limit of conventional photolithography. Recently, the International Roadmap for Devices and Systems listed DSA as one of the advanced lithography techniques for the fabrication of 3-5 nm technology node devices. DSA can be combined with other lithography techniques, such as extreme ultra violet (EUV) and 193 nm immersion (193i), to further enhance the patterning resolution and the device density. So far, DSA has demonstrated its superior ability for the fabrication of nanoscale devices, such as fin field effect transistor and bit pattern media, offering a variety of configurations for high-density integration and low-cost manufacturing. Over 1 T in(-2) device density can be achieved either by direct templating or coupled with nanoimprinting to improve the throughput. The development of high chi block copolymer further enhances the patterning resolution of DSA. In addition to its superiority in high-resolution patterning, the implementation of DSA on a 300 mm pivot line fully demonstrates its potential for large-scale, high-throughput, and cost-effective manufacturing in industrial environment.
Directed Self-Assembly of Ternary Blends of Block Copolymer and Homopolymers on Chemical Patterns

Ling-Shu Wan,Paulina A. Rincon Delgadillo,Roel Gronheid,Paul F. Nealey

DOI: https://doi.org/10.1116/1.4818882

2013-01-01

Abstract:In this work ternary blends of symmetric lamellae-forming poly(styrene-block-methyl methacrylate) block copolymer and polystyrene and PMMA homopolymers were prepared for the directed self-assembly (DSA) on chemically nanopatterned substrates using 2x density multiplication. Homopolymers with comparable molecular weights to that of the corresponding blocks in the block copolymer were used to adjust the periods of the blends. The periods of the blends increased from 38.5 to 50 nm as the volume fraction of homopolymers increased from 0 to 30%. The periods were analyzed by grazing-incidence small-angle X-ray scattering, direct measurement from and fast Fourier transform of scanning electron microscopy images. DSA results indicate that the perfection and registration of the assembled films were mainly determined by the commensurability between the periods of the blends and the chemical patterns. Patterns with relatively small w/L-S (guiding stripe width/period of chemical pattern) led to mixed structures of dots and parallel structures. The process window of L-S where the block copolymer alignment shows a high degree of perfection was estimated at +/- 3.6% to +/- 4.6% L-o. (C) 2013 American Vacuum Society.
Ultra-Fast Block Copolymers for Sub-5 Nm Lithographic Patterning

Xuemiao Li,Chenxu Wang,Jianuo Zhou,Zhenyu Yang,Yan Zhang,Hai Deng

DOI: https://doi.org/10.2494/photopolymer.31.483

2018-01-01

Journal of Photopolymer Science and Technology

Abstract:DSA lithography is a chemical assisted patterning approach, which has attracted a great deal of interest due to its potential high resolution and low cost. Researchers around the world discovered some sub-5 nm high resolution DSA materials, and all these materials required high annealing temperature or long annealing time. In this study, we design and synthesize some PS-typed and PMMA-typed fluoro-containing BCPs. The finest half pitch of these BCPs is less than 5 nm. And the thermal annealing time of PS-typed BCPs is optimized to 1 min, which has been the highest assembly speed for sub-5 nm nanopatterning. The self-assembly speed of PMMA-typed BCPs is much slower than the PS-typed. We further exhibit that ordered nanopatterns are assembled to appear straight 10 nm lines in the silicon template.
Synthesis of Fluorine-containing Polyacrylamide Block Copolymer and Their Application for Rapidly Formation of Sub-10 Nm Microdomains

Zhilong Li,Hai Deng

DOI: https://doi.org/10.2494/photopolymer.32.389

2019-01-01

Journal of Photopolymer Science and Technology

Abstract:Rapidly growing demand of shrinking the features of integrated circuits has accentuated the need for the next generation lithography. Among them, directed self-assembly (DSA) of block copolymers (BCPs) has attracted great interest due to their capability to form ordered nanopattern with high resolution and low cost. In this regard, several groups have investigated some high resolution DSA materials. However, all these materials required high annealing temperature or long annealing time. In this work, a series of polyacrylamide-based fluorine-containing BCPs were synthesized via reversible addition-fragmentation chain-transfer polymerization. One of the BCP materials can form sub-10 nm domains within 1 min at 80 degrees C. A domain spacing of BCP with hexagonal structure was further confirmed by SEM on a silicon wafer.
Sub-10-nm patterning via directed self-assembly of block copolymer films with a vapour-phase deposited topcoat

Suh, Hyo Seon,Kim, Do Han,Moni, Priya,Xiong, Shisheng,Ocola, Leonidas E.,Zaluzec, Nestor J.,Gleason, Karen K.,Nealey, Paul F.

DOI: https://doi.org/10.1038/nnano.2017.34

IF: 38.3

2017-01-01

Nature Nanotechnology

Abstract:Directed self-assembly (DSA) of the domain structure in block copolymer (BCP) thin films is a promising approach for sub-10-nm surface patterning. DSA requires the control of interfacial properties on both interfaces of a BCP film to induce the formation of domains that traverse the entire film with a perpendicular orientation. Here we show a methodology to control the interfacial properties of BCP films that uses a polymer topcoat deposited by initiated chemical vapour deposition (iCVD). The iCVD topcoat forms a crosslinked network that grafts to and immobilizes BCP chains to create an interface that is equally attractive to both blocks of the underlying copolymer. The topcoat, in conjunction with a chemically patterned substrate, directs the assembly of the grating structures in BCP films with a half-pitch dimension of 9.3 nm. As the iCVD topcoat can be as thin as 7 nm, it is amenable to pattern transfer without removal. The ease of vapour-phase deposition, applicability to high-resolution BCP systems and integration with pattern-transfer schemes are attractive properties of iCVD topcoats for industrial applications. A thin topcoat that grafts directly to block copolymer films does not need to be removed prior to further fabrication steps.
Directed Self-Assembly of Poly(styrene-B-vinyl Acetate) Block Copolymers on Chemical Patterns for Sub-10 Nm Nanopatterning Via Thermal Annealing

Hanwen Lai,Xiaohui Zhang,Guangcheng Huang,Yadong Liu,Weihua Li,Shengxiang Ji

DOI: https://doi.org/10.1016/j.polymer.2022.125277

IF: 4.6

2022-01-01

Polymer

Abstract:Directed self-assembly (DSA) of block copolymers (BCPs) is an effective approach for the fabrication of sub-10 nm features for semiconductor devices. Although many high-chi BCPs have been developed for DSA, the major-ity of them has a significant difference in surface energies (gamma s) between two blocks. Here we report the synthesis and self-assembly of poly (styrene -b-vinyl acetate) (PS-b-PVAc). PS-b-PVAc has a higher Flory-Huggins interac-tion parameter (chi) than poly (styrene -b-methyl methacrylate) (PS-b-PMMA) and the smallest achievable period (LO) is 18.2 nm. PS and PVAc have nearly equal gamma s and a perpendicular orientation of domains is obtained on random copolymer brushes under thermal annealing. DSA of PS-b-PVAc (SV-1 and SV-2) is successfully demonstrated in the thin films on chemical patterns, and the feature size down to 9.5 nm is obtained in DSA of SV-4 with 2 x density multiplication. These results demonstrate that PS-b-PVAc could be a candidate BCP for next-generation DSA lithography.
Synthesis and Morphology Studies of Polysiloxane-based Triblock Copolymers

Lei Dong,Rin Odashima,Takehiro Seshimo,Yuta Nabae,Teruaki Hayakawa

DOI: https://doi.org/10.2494/photopolymer.32.817

2019-01-01

Journal of Photopolymer Science and Technology

Abstract:The directed self-assembly (DSA) behavior of block copolymers (BCPs) has recently been widely studied because of its potential application to the nanofabrication of semi-conductors. In this study, a novel molecular design based on the A-B-C triblock copolymer was developed: polystyrene-b-poly(dimethyl siloxane)-b-poly(substituted siloxane) (PS-b-PDMS-b-PMSCXOH, where X = 3 or 6). The high x parameter between the PS and PDMS segments was expected to effectively reduce line edge roughness (LER) and resulted in a smooth interface with a lamellar nanostructure. The high etching resistance of Si-containing blocks also facilitates the potential pattern transfer to Si substrate. Small-angle X-ray scattering (SAXS) and transmission electron microscopy (TEM) were used to reveal the selfassembly morphologies of A-B-C triblock copolymers, which are more complex compared to commonly studied binary system of A-B diblock copolymer. The reduced interface roughness in the microphase-separated nanostructures that can lead to reducing LER of patterns observed in bulk.
Poly(2-vinylpyridine)-b-poly(fluorinated Methacrylate) Block Copolymers Forming 5 Nm Domains Containing Metallocene

Xuemiao Li,Hai Deng

DOI: https://doi.org/10.1021/acsapm.0c00608

2020-01-01

ACS Applied Polymer Materials

Abstract:Directed self-assembly (DSA) of thin films of a block copolymer (BCP) is a promising approach for sub-10 nm lithographic patterning. In this paper, a series of poly(2-vinylpyridine)-block-poly(penta-decafluorooctyl methacrylate) (P2VP-bPPDFMA) and poly(2-vinylpyridine)-block-poly(heptafluorobutyl methacrylate) (P2VP-b-PHFBMA) BCPs are synthesized by living anionic polymerization. The molar ratio of the two blocks and the degree of polymerization enable precise control of the morphology and size of the microdomains of the BCPs. The resulting materials form sub-5 nm scale microphase-separated structures, as seen with small-angle X-ray scattering and transmission electron microscopy. The introduction of the fluorine-containing blocks leads to a significant increase in the Flory-Huggins interaction parameter (.) between the two blocks, as determined with the mean-field theory. The temperature dependence of chi(2VP/PDFMA) is chi = 48.79/T + 0.272 (0.387 at 150 degrees C) and of chi(2VP/HFMBA) is chi = 2.29/T + 0.342 (0.347 at 150 degrees C). chi of each of these BCPs is 4 times higher than that of polystyrene-block-poly(2-vinylpyridine) (0.083 at 150 degrees C). The resulting smallest domain spacing of these BCPs is 8.3 nm in a lamellar morphology. The BCPs self-assemble into straight lines in a silicon trench template and the doping of the P2VP block with metal atoms can enhance their etch resistance, demonstrating the potential of these BCPs for advanced lithographic applications.
Ultra-fast Directly Self-Assembly Materials for Sub-5 Nm Lithographic Patterning

Xuemiao Li,Chenxu Wang,Hai Deng

DOI: https://doi.org/10.1109/cstic.2018.8369209

2018-01-01

Abstract:The directed self-assembly (DSA) of block copolymers has attracted a great deal of interest due to its potential applications in sub-10 nm or sub-5 nm lithography [1-3]. The conventional organic-organic DSA materials such as poly-(styrene-block-methyl methacrylate) (PS-b-PMMA) have been extensively studied [4,5], however, the low etch contrast and the difficulty to reduce L0 limits its application. In this study, we designed and synthesized the novel DSA materials based on PS-b-PMMA. Through the modifying of acrylics part, segment-segment interaction parameter (x) can be significantly increased, which leads to rapid self-assembly and higher resolution.
Fabrication of High Χ-Low N Block Copolymers with Thermally Stable Sub-5 Nm Microdomains Using Polyzwitterion As a Constituent Block

Shi-Peng Ding,Ze-Kun Zhang,Ze Ye,Bin-Yang Du,Jun-Ting Xu

DOI: https://doi.org/10.1021/acsmacrolett.1c00461

IF: 5.8

2021-01-01

ACS Macro Letters

Abstract:In this work, we used zwitterionic poly(4-vinylpyridine) propane-1-sulfonate (PVPS) as a constituent block to construct high χ-low N block copolymers (BCPs) with different neutral polymers as the other block, including polystyrene (PS), poly(ethylene oxide) (PEO), and poly(l-lactide) (PLLA). Lamellar structures with sub-5 nm microdomains were observed in all three types of BCPs. Due to the tendency of self-aggregation induced by electrostatic interaction in polyzwitterion, the Flory-Huggins parameters (χ) between PVPS and most neutral polymers are relatively high, which provides a facile and efficient way to fabricate high χ-low N BCPs. In addition, the dimension of the sub-5 nm structures formed in PVPS-containing BCPs showed high thermal stability with a small fluctuation (±0.1 nm) of domain spacings upon heating.
Self-assembly of ABCBA Linear Pentablock Terpolymers

Lei Guo,Junting Xu,Binyang Du

DOI: https://doi.org/10.1080/15583724.2023.2178008

2024-01-01

Polymer Reviews

Abstract:The multiblock copolymers, which exhibit more complex block composition and sequences than those of di- or tri-block copolymers, have attracted more and more scientific interest and attention in the past years. The ABCBA linear pentablock terpolymer with block number of 5 is a representative model and starting point for investigating the self-assembly of multiblock copolymers, which is helpful for understanding the assembled structures and solution properties of biomacromolecules with complex sequence structures. Compared with AB diblock copolymers and ABC triblock terpolymers, the ABCBA pentablock terpolymers have more intricate morphologies and have better mechanical properties with similar morphologies. This review will mainly focus on ABCBA linear pentablock terpolymers and systematically summary the recent research progress in self-assembly of ABCBA linear pentablock terpolymers in bulk and solution as well as their potential applications in various technical fields including drug carriers, surface coatings, inorganic material templates, battery materials, and polymer gel.
Single crystals and two-dimensional crystalline assemblies of block copolymers

Chen Yang,Zi-Xian Li,Jun-Ting Xu

DOI: https://doi.org/10.1002/pol.20210866

IF: 3.046

2022-01-01

Journal of Polymer Science

Abstract:Block copolymer single crystals (BCPSCs) have attracted widespread attentions due to their unique two-dimensional (2D) structure, good controllability, and great potential applications in recent years. In this paper, the morphology, surface structure of BCPSCs and the related influencing factors are reviewed. We also summarize the studies of 2D crystalline assemblies of block copolymers (BCPs) driven by crystallization and intermolecular pi-pi interaction. Moreover, the functionalization and properties of BCPSCs and 2D crystalline assemblies of BCPs are introduced. Finally, we put forward some unsolved problems in this field.
Block Copolymers with a Fluoro-Block for 5 Nm DSA Patterning Application

Xuemiao Li,Zhilong Li,Le Dai,Hui Cao,Hai Deng

DOI: https://doi.org/10.1117/12.2543121

2020-01-01

Abstract:In this manuscript, various fluorine-containing BCPs were synthesized by living anionic polymerization or reversible addition−fragmentation chain-transfer (RAFT) polymerization. The resulted BCPs showed high χ value > 0.2. With similar χ value, we observed that PS-typed BCPs formed microdomains of 5 nm within 1 min at 80°C, whereas polymethacrylate-typed ones required 1 h annealing at 160°C. When rigid side chain was incorporated into the polymethacrylate block, the annealing time can be shortened to 5 min at 160°C. However, the poor film formation of the such BCP with rod-like side chain resulted in rough line pattern after the thermal annealing process. The polymethacrylate-typed BCPs generally requires high boiling point solvents for better film formation and better line patterning.
Directed Block Copolymer Self-Assembly Implemented Via Surface-Embedded Electrets

Mei-Ling Wu,Dong Wang,Li-Jun Wan

DOI: https://doi.org/10.1038/ncomms10752

IF: 16.6

2016-01-01

Nature Communications

Abstract:Block copolymer (BCP) nanolithography is widely recognized as a promising complementary approach to circumvent the feature size limits of conventional photolithography. The directed self-assembly of BCP thin film to form ordered nanostructures with controlled orientation and localized pattern has been the key challenge for practical nanolithography applications. Here we show that BCP nanopatterns can be directed on localized surface electrets defined by electron-beam irradiation to realize diverse features in a simple, effective and non-destructive manner. Charged electrets can generate a built-in electric field in BCP thin film and induce the formation of perpendicularly oriented microdomain of BCP film. The electret-directed orientation control of BCP film can be either integrated with mask-based patterning technique or realized by electron-beam direct-writing method to fabricate microscale arbitrary lateral patterns down to single BCP cylinder nanopattern. The electret-directed BCP self-assembly could provide an alternative means for BCP-based nanolithography, with high resolution.
Directed self-assembly of block copolymers by chemical or topographical guiding patterns: Optimizing molecular architecture, thin-film properties, and kinetics

weihua li,marcus muller

DOI: https://doi.org/10.1016/j.progpolymsci.2015.10.008

IF: 31.281

2016-01-01

Progress in Polymer Science

Abstract:Patterning strategies based on directed self-assembly (DSA) of block copolymers, as one of the most appealing next-generation lithography techniques, have attracted abiding interest. DSA aims at fabricating defect-free geometrically simple patterns on large scales or irregular device-oriented structures. Successful application of DSA requires to control and optimize multiple process parameters related to the bulk morphology of the block copolymer, its interaction with the chemical or topographical guiding pattern, and the kinetics of structure formation. Most studies have focused on validating DSA patterning techniques using PS-b-PMMA block copolymers as a prototypical material. As the development of DSA techniques advances, recent efforts have been devoted to extending the materials selection in order to fabricate more complex geometric patterns or patterns with smaller characteristic dimensions. How to select appropriate polymer materials in a vast parameter space is a critical but also challenging step. In this review, we discuss recent progress in the research of DSA of block copolymers focusing on three aspects: (i) screening the block copolymer materials, (ii) controlling the film properties, and (iii) tailoring the phase separation kinetics.
Single-Step Expeditious Synthesis of Diblock Copolymers with Different Morphologies by Lewis Pair Polymerization-Induced Self-Assembly

Chengkai Li,Wuchao Zhao,Jianghua He,Yuetao Zhang,Wangqing Zhang

DOI: https://doi.org/10.1002/anie.202202448

2022-06-13

Abstract:Lewis pair polymerization has demonstrated its unique advantages and powerful capability in polymer synthesis. Here we employ strong nucleophilic N-heterocyclic olefin (NHO) and bulky organoaluminum to construct a frustrated Lewis pair, which can realize the compounded sequence control (CSC) copolymerization and self-assembly the mixture of dimethylaminoethyl acrylate and fluoride-functionalized methacrylate into diblock copolymers (di-BCPs) nano-assemblies through polymerization-induced self-assembly in one-pot, single-step manner within minutes. These di-BCPs were characterized by 1 H and 13 C NMR, GPC, DSC, and TEM. By utilizing appropriate solvophilic block and solvophobic block, such Lewis pair polymerization-induced self-assembly strategy enables the expeditious, room-temperature synthesis of di-BCP nanoparticles with different morphologies, including spheres, worms, vesicles, and even fibers, thus suggesting the great application potential of such method in the future.

Si Containing Block Copolymers Quickly Assemble into Sub-6 Nm Domains

Boundary-Directed Epitaxy of Block Copolymers

Synthesis of Liquid Crystalline Block Copolymers Self-assembled into Sub-5 Nm Microdomains

Directed Self-Assembly of Triblock Copolymer on Chemical Patterns for Sub-10-nm Nanofabrication via Solvent Annealing

Design and synthesis of novel directed self-assembly block copolymers for sub-10 nm lithography application

Directed Self-Assembly of Block Copolymers for Sub-10 Nm Fabrication

Directed Self-Assembly of Ternary Blends of Block Copolymer and Homopolymers on Chemical Patterns

Ultra-Fast Block Copolymers for Sub-5 Nm Lithographic Patterning

Synthesis of Fluorine-containing Polyacrylamide Block Copolymer and Their Application for Rapidly Formation of Sub-10 Nm Microdomains

Sub-10-nm patterning via directed self-assembly of block copolymer films with a vapour-phase deposited topcoat

Directed Self-Assembly of Poly(styrene-B-vinyl Acetate) Block Copolymers on Chemical Patterns for Sub-10 Nm Nanopatterning Via Thermal Annealing

Synthesis and Morphology Studies of Polysiloxane-based Triblock Copolymers

Poly(2-vinylpyridine)-b-poly(fluorinated Methacrylate) Block Copolymers Forming 5 Nm Domains Containing Metallocene

Ultra-fast Directly Self-Assembly Materials for Sub-5 Nm Lithographic Patterning

Fabrication of High Χ-Low N Block Copolymers with Thermally Stable Sub-5 Nm Microdomains Using Polyzwitterion As a Constituent Block

Self-assembly of ABCBA Linear Pentablock Terpolymers

Single crystals and two-dimensional crystalline assemblies of block copolymers

Block Copolymers with a Fluoro-Block for 5 Nm DSA Patterning Application

Directed Block Copolymer Self-Assembly Implemented Via Surface-Embedded Electrets

Directed self-assembly of block copolymers by chemical or topographical guiding patterns: Optimizing molecular architecture, thin-film properties, and kinetics

Single-Step Expeditious Synthesis of Diblock Copolymers with Different Morphologies by Lewis Pair Polymerization-Induced Self-Assembly