Sequential Nanopatterned Block Copolymer Self-Assembly on Surfaces.

Nathanael Wu,J. Buriak,C. Jin,E. Luber,B. Olsen

DOI: https://doi.org/10.1021/acs.langmuir.6b01365

IF: 3.9

2016-06-01

Langmuir

Abstract:Bottom-up self-assembly of high-density block-copolymer nanopatterns is of significant interest for a range of technologies, including memory storage and low-cost lithography for on-chip applications. The intrinsic or native spacing of a given block copolymer is dependent upon its size (N, degree of polymerization), composition, and the conditions of self-assembly. Polystyrene-block-polydimethylsiloxane (PS-b-PDMS) block copolymers, which are well-established for the production of strongly segregated single-layer hexagonal nanopatterns of silica dots, can be layered sequentially to produce density-doubled and -tripled nanopatterns. The center-to-center spacing and diameter of the resulting silica dots are critical with respect to the resulting double- and triple-layer assemblies because dot overlap reduces the quality of the resulting pattern. The addition of polystyrene (PS) homopolymer to PS-b-PDMS reduces the size of the resulting silica dots but leads to increased disorder at higher concentrations. The quality of these density-multiplied patterns can be calculated and predicted using parameters easily derived from SEM micrographs of corresponding single and multilayer patterns; simple geometric considerations underlie the degree of overlap of dots and layer-to-layer registration, two important factors for regular ordered patterns, and clearly defined dot borders. Because the higher-molecular-weight block copolymers tend to yield more regular patterns than smaller block copolymers, as defined by order and dot circularity, this sequential patterning approach may provide a route toward harnessing these materials, thus surpassing their native feature density.

Materials Science,Chemistry,Medicine

What problem does this paper attempt to address?

The problem that this paper attempts to solve is how to exceed the inherent density of a given single - layer nanoparticle pattern by a bottom - up approach and use strongly segregated block copolymers (BCP) to form high - density nanopatterns on the surface. Specifically, the paper explores how to double or triple the density of nanoparticle patterns through two - or three - step identical self - assembly processes. The key to this method lies in controlling the overlap of dots between different layers and the inter - layer alignment to obtain high - quality multi - layer ordered nanopatterns.

### Main research contents:
1. **Background and motivation**:
- The self - assembly technology of block copolymers (BCP) has significant potential in nanopatterning, especially in information storage applications on semiconductor surfaces.
- The paper focuses on how to exceed the inherent characteristic density of BCP through self - assembly methods, especially for the preparation of high - density nanopatterns.

2. **Methods**:
- Use strongly segregated polystyrene - polydimethylsiloxane (PS - b - PDMS) block copolymers to form a single - layer hexagonal nanoparticle pattern through self - assembly.
- Through two - or three - step identical self - assembly processes, achieve nanoparticle patterns with double and triple densities respectively.
- Investigate the influence of adding polystyrene (PS) on the size of nanoparticle dots and the quality of the pattern.

3. **Key parameters**:
- **Lattice parameter** (center - to - center spacing) and **nanoparticle diameter** are the key parameters affecting the quality of multi - layer patterns.
- The **β value** (defined as \(\beta=\sqrt{3}\frac{d_0}{L_0}\), where \(d_0\) is the average dot diameter and \(L_0\) is the lattice parameter) and the **standard deviation of hydrostatic strain** (\(\sigma_{\epsilon}\)) are used to predict the degree of dot overlap.

4. **Experimental results**:
- By adding different proportions of PS, the size of nanoparticle dots and the quality of the pattern can be adjusted.
- When the proportion of PS is appropriate, the overlap of dots can be significantly reduced and the orderliness of multi - layer patterns can be improved.
- The experimental results verify the prediction of the theoretical model, that is, by optimizing the \(\beta\) and \(\sigma_{\epsilon}\) parameters, the overlap of dots can be minimized, thereby achieving high - density nanopatterns.

### Conclusion:
The paper successfully demonstrates the feasibility of achieving high - density nanoparticle patterns through self - assembly methods, especially in terms of doubling and tripling the density. By optimizing material parameters and processing conditions, the quality and density of multi - layer nanopatterns can be significantly improved, providing a new approach for future nanotechnology and applications.