Two-Surface-Plasmon-Polariton-Absorption Based Lithography Using 400 Nm Femtosecond Laser

Yunxiang Li,Fang Liu,Yu Ye,Weisi Meng,Kaiyu Cui,Xue Feng,Wei Zhang,Yidong Huang

DOI: https://doi.org/10.1063/1.4866870

IF: 4

2014-01-01

Applied Physics Letters

Abstract:The two-surface-plasmon-polariton-absorption (TSPPA) at the vacuum wavelength of 400 nm is observed, and the subwavelength lithography, by using this nonlinear phenomenon, is demonstrated. Resist patterns with the period of ∼138 nm have been obtained by exciting the SPP at the Al/resist interface with the 400 nm femtosecond laser. By altering the exposure time, the exposure linewidth reduces from ∼90 nm to ∼55 nm, which explores the ability of the TSPPA based lithography at the short wavelength. The factors limiting the performance of the proposed TSPPA based lithography are discussed in detail.