Defined Etching Of Carbon-Diamond Films On Silicon Using An Oxygen Plasma With Titanium Masking

K.K. Chan,G.A.J. Amaratunga,T.K.S. Wong
DOI: https://doi.org/10.1016/0925-9635(92)90040-U
IF: 3.806
1992-01-01
Diamond and Related Materials
Abstract:A technique for pattern transfer onto carbon-diamond films deposited by radio-frequency plasma-enhanced chemical vapour deposition is reported. Such a technique involves standard photolithography processes and reactive ion etching by oxygen and is compatible with present day microelectronic technology. The patterns transferred are well defined with very good resolution.
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