Effects of the Surface Treatment of Silicon Substrate on the Field Emission Characteristic of A Silicon and Amorphous Diamond Cold Cathode Emitter

J Chen,SZ Deng,JC She,NS Xu

DOI: https://doi.org/10.1016/s0304-3991(99)00060-1

IF: 2.994

1999-01-01

Ultramicroscopy

Abstract:Details are given of an experimental study of the effects of surface treatment of silicon substrate on the field emission process of flat amorphous diamond (a-D) film field emitters. Using a filtered cathodic vacuum arc plasma deposition system (FCVAPD), the amorphous diamond (a-D) film was deposited on both non-treated and etched silicon wafers (n-type and p-type). The field electron emission characteristic was measured before and after depositing a-D film. The a-D film on etched silicon wafer shows distinct increase in emission current compared with that on non-treated silicon wafer. The phenomenon is attributed to two important reasons: the low or even negative surface electron affinity of a-D film and the local field enhancement at the Si-diamond interface.