Nanostructured Diamond Film on Etched Silicon and Its Field Emission Behavior

NS Xu,J Chen,YT Feng,SZ Deng
DOI: https://doi.org/10.1116/1.591325
2000-01-01
Abstract:Nanostructured diamond films were deposited on the etched silicon wafer by using dielectrophoresis method. The properties of the film were analyzed using scanning electron microscopy and micro-Raman spectrometry. Their field emission behavior was studied using an anode probe technique. A current density of 5 mA/cm2 was recorded at a field of 3.56 MV/m. This effect is attributed to the field enhancement at the rough silicon-diamond interface and the lower or even negative electron affinity of the diamond surface.
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