Preparation and Characterization for Nanodiamond Thin Film for Electronic Field Emission Applications

J. Chen,F. Y. Xie,W. G. Xie,X. Liu,W. H. Zhang,S. Z. Deng,N. S. Xu
DOI: https://doi.org/10.1116/1.2825144
2008-01-01
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena
Abstract:The nanodiamond thin film is deposited on a single crystal silicon substrate by a dip-coating technique from the pretreated nanodiamond suspension. The surface structures of the as-prepared thin film and the annealed sample have been investigated by x-ray photoelectron spectroscopy and nuclear magnetic resonance. The change of surface elements of O, N, and a different hybridized carbon is derived. Initiation of graphitization is observed at an annealing temperature of 900 °C and the dangling bonds from the internal diamond phase are confirmed. The electron field emission property of this annealed sample is better than the as-prepared thin film. The enhancement of electron emission is discussed with the change of surface structure and the surface states.
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