Preparation and Property of Nanocrystalline Diamond Film Doped with N

WANG Yanping,WANG Bing,XIONG Ying,ZHOU Liang
2011-01-01
Abstract:Nanocrystalline diamond film doped with N was prepared on Si substrate by microwave plasma chemical vapor deposition(MPCVD) technology using Ar,CH_4,CO_2 as actiong gas source and the methanol saturated solution of melamine as doping source.The as-grown film was characterized with AFM microscopy and Raman spectrum,the phase composition of diamond film was characterized by its typical Raman spectrum form.Hall effect measurement was used to reveal its conductive feature.The results show that the thin film has average crytalline grains nearly 20nm and fine surface roughness about 8.935nm,the nitrogen doped nanocrystalline diamond film is highly conductive n-type semiconductor with eletric conductivity to 0.76×10~2Ω~(-1)cm~(-1) and carrier concentration to 2.18×10~(19)/cm~3.
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